SiN-passivated Γ-gate Al0.27Ga0.73N/GaN high electron mobility transistors by using a shifted exposure method

Ching-Sung Lee; An-Yung Kao
August 2009
Applied Physics Letters;8/31/2009, Vol. 95 Issue 9, p093505
Academic Journal
Effective gate-length reduction, surface passivation, and a field-plate structure upon the gate-drain region of a Γ-gate Al0.27Ga0.73N/GaN high electron mobility transistor (HEMT) have been achieved at the same time. The present SiN-passivated device with a 0.6 μm gate length and a 0.6 μm long field plate has demonstrated superior dc and rf characteristics as compared to a conventional-gated structure. Physical insights of device performance with respect to different SiN layer thicknesses are also investigated.


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