TITLE

Floating-gate memory based on an organic metal-insulator-semiconductor capacitor

AUTHOR(S)
William, S.; Mabrook, M. F.; Taylor, D. M.
PUB. DATE
August 2009
SOURCE
Applied Physics Letters;8/31/2009, Vol. 95 Issue 9, p093309
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A floating gate memory element is described which incorporates an evaporated gold film embedded in the gate dielectric of a metal-insulator-semiconductor capacitor based on poly(3-hexylthiophene). On exceeding a critical amplitude in the voltage sweep, hysteresis is observed in the capacitance-voltage (C-V) and current-voltage (I-V) characteristics of the device. The anticlockwise hysteresis in C-V is consistent with strong electron trapping during the positive cycle but little hole trapping during the negative cycle. We argue that the clockwise hysteresis observed in the negative cycle of the I-V plot, arises from leakage of trapped holes through the underlying insulator to the control gate.
ACCESSION #
44066544

 

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