Capacitance switching in SiO2 thin film embedded with Ge nanocrystals caused by ultraviolet illumination

Yang, M.; Chen, T. P.; Ding, L.; Liu, Y.; Zhu, F. R.; Fung, S.
August 2009
Applied Physics Letters;8/31/2009, Vol. 95 Issue 9, p091111
Academic Journal
A structure of indium tin oxide/SiO2 embedded with Ge nanocrystal (nc-Ge)/p-Si substrate was fabricated. The capacitance of the structure can be switched to a high-capacitance or low-capacitance state by an ultraviolet (UV) illumination. The increase (or decrease) in the capacitance is accompanied with the decrease (or increase) in the oxide resistance. The capacitance switching is explained in terms of the UV illumination-induced charging and discharging in the nc-Ge.


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