A ultraviolet-visible-near infrared photodetector using nanocrystalline Si superlattice

Zhenrui Yu; Aceves-Mijares, Mariano
August 2009
Applied Physics Letters;8/24/2009, Vol. 95 Issue 8, p081101
Academic Journal
We report a simple silicon/Si nanocrystal superlattice/indium tin oxide structure as a photodetector, which shows a very high photosensitivity in a wide wavelength range from ultraviolet (UV) to near infrared. The fabrication of this photodetector structure is easily integrated into a standard process of Si microelectronics. The light and dark current versus voltage characteristics and photoluminescence of the photodetector show that the optical down-conversion of UV light by the superlattice layer is the main reason of the enhanced UV response.


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