Prediction of ordering and spontaneous rotation of epitaxial habits in substrate-coherent InGaN and GaAsSb

Liu, Jefferson Zhe; Trimarchi, Giancarlo; Zunger, Alex
August 2009
Applied Physics Letters;8/24/2009, Vol. 95 Issue 8, p081901
Academic Journal
Coherently strained In0.5Ga0.5N on GaN and CaO substrates are theoretically predicted to show stable ordering in the chalcopyrite structure, as is Ga2AsSb on GaAs and InP substrates. Depending on the substrate and the film concentration, we predict a spontaneous rotation of the stablest chalcopyrite film axis from perpendicular to parallel to the (001) substrate.


Related Articles

  • Influence of symmetry mismatch on heteroepitaxial growth of perovskite thin films. Proffit, D. L.; Jang, H. W.; Lee, S.; Nelson, C. T.; Pan, X. Q.; Rzchowski, M. S.; Eom, C. B. // Applied Physics Letters;9/15/2008, Vol. 93 Issue 11, p111912 

    Epitaxial thin films of (110) orthorhombic CaRuO3 grown on orthorhombic (110) NdGaO3 and cubic (001) (LaAlO3)0.3–(Sr2AlTaO6)0.7 (LSAT) substrates serve as a model system isolating the influence of oxygen octahedron distortion on epitaxial growth of thin films. CaRuO3 grows as a coherent...

  • Electromigration-driven surface morphological stabilization of a coherently strained epitaxial thin film on a substrate. Sfyris, Georgios I.; Gungor, M. Rauf; Maroudas, Dimitrios // Applied Physics Letters;6/7/2010, Vol. 96 Issue 23, p231911 

    We analyze the surface morphological stability of a coherently strained thin film grown epitaxially on a thick elastic substrate under the simultaneous action of an electric field that drives surface electromigration. A model of driven film surface morphological evolution is developed and a...

  • Homobuffer thickness effect on the background electron carrier concentration of epitaxial ZnO thin films. Yang, Z.; Zhou, H. M.; Chen, W. V.; Li, L.; Zhao, J. Z.; Yu, P. K. L.; Liu, D. J. L. // Journal of Applied Physics;Oct2010, Vol. 108 Issue 6, p066101 

    Epitaxial ZnO thin films were grown on r-plane sapphire substrates using plasma-assisted molecular-beam epitaxy. ZnO homobuffer layers grown at a lower temperature were introduced to improve the crystallinity of the top ZnO thin films. Thicker homobuffer layers lead to better crystallinity of...

  • Defects limiting performance of devices fabricated on GaN/metal heterostructure. Maximenko, Serguei I.; Freitas, Jaime A.; Mittereder, Jeffrey A.; Rowland, Larry B.; Kim, Jihyun // Applied Physics Letters;5/26/2008, Vol. 92 Issue 21, p212104 

    Ni Schottky barrier contacts were processed to characterize quality and suitability of GaN films grown on (111) face of titanium carbide metallic substrates for vertical device application. We found that defects such as voids (pores) in the GaN film strongly influence the optical and electrical...

  • The Origin of Local Strain in Highly Epitaxial Oxide Thin Films. Ma, Chunrui; Ming Liu; Chonglin Chen; Yuan Lin; Yanrong Li; Horwitz, J. S.; Jiang, Jiechao; Meletis, E. I.; Qingyu Zhang // Scientific Reports;11/1/2013, p1 

    The ability to control the microstructures and physical properties of hetero-epitaxial functional oxide thin films and artificial structures is a long-sought goal in functional materials research. Normally, only the lattice misfit between the film and the substrate is considered to govern the...

  • Bandgap bowing in BGaN thin films. Ougazzaden, A.; Gautier, S.; Moudakir, T.; Djebbour, Z.; Lochner, Z.; Choi, S.; Kim, H. J.; Ryou, J.-H.; Dupuis, R. D.; Sirenko, A. A. // Applied Physics Letters;8/25/2008, Vol. 93 Issue 8, p083118 

    We report on the bandgap variation in thin films of BxGa1-xN grown on AlN/sapphire substrates using metal-organic vapor phase epitaxy. Optical transmission, photoluminescence, and x-ray diffraction were utilized to characterize the materials’ properties of the BxGa1-xN films. In contrast...

  • Interfacial structure and chemistry of epitaxial CoFe2O4 thin films on SrTiO3 and MgO substrates. Xie, S.; Cheng, J.; Wessels, B. W.; Dravid, V. P. // Applied Physics Letters;11/3/2008, Vol. 93 Issue 18, p181901 

    Interfacial structure and chemistry of epitaxial CoFe2O4 thin films on (001)_SrTiO3 and (001)_MgO substrates were investigated using high-angle-annular-dark-field imaging combined with electron-energy-loss-spectra (EELSs) analyses at a subnanometer scale. The results show that CoFe2O4/SrTiO3...

  • Growth, crystal structure, and properties of epitaxial BiScO3 thin films. Trolier-McKinstry, Susan; Biegalski, Michael D.; Wang, Junling; Belik, Alexei A.; Takayama-Muromachi, Eiji; Levin, Igor // Journal of Applied Physics;Aug2008, Vol. 104 Issue 4, p044102 

    Epitaxial thin films of BiScO3—a compound thermodynamically unstable under ambient conditions—were grown on BiFeO3-buffered SrTiO3 substrates. X-ray diffraction confirmed the reasonable crystalline quality of the films with a full width at half maximum of 0.58° in ω (004...

  • Nanogrowth twins and abnormal magnetic behavior in CoFe2O4 epitaxial thin films. Yan, Li; Wang, Yu; Li, Jiefang; Pyatakov, Alexander; Viehland, D. // Journal of Applied Physics;Dec2008, Vol. 104 Issue 12, p123910 

    Nanogrowth twins (GTs) have been observed in CoFe2O4 (CFO) epitaxial thin films deposited on (111) oriented SrTiO3 substrates by pulsed laser deposition. The GTs form during nucleation and growth and consist of CFO growth regions that have a mirror relationship with respect to each other. We...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics