Transmission electron microscopy investigation of microtwins and double positioning domains in (111) 3C-SiC in relation with the carbonization conditions

Roy, S.; Portail, M.; Chassagne, T.; Chauveau, J. M.; Vennéguès, P.; Zielinski, M.
August 2009
Applied Physics Letters;8/24/2009, Vol. 95 Issue 8, p081903
Academic Journal
In this work, transmission electron microscopy is used to investigate the influence of the carbonization conditions on the formation of crystal defects in 3C-SiC layers deposited on (111) silicon. We focus on two kinds of defects; (1) the stacking faults and microtwins lying in the (111) planes, and (2) the double positioning domains. While the density of the stacking faults and microtwins is found independent on the carbonization conditions, the size of the double positioning domains is strongly influenced by the propane flow rate and can be related to the substrate sealing at the early stage of carbonization.


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