Softening of the tunneling gap in modulation-doped GaAs/AlGaAs asymmetric coupled double quantum wells in magnetic fields

Shin, Y. H.; Park, Y. H.; Perry, C. H.; Simmons, J. A.; Takamasu, T.; Yongmin Kim
August 2009
Applied Physics Letters;8/24/2009, Vol. 95 Issue 8, p082102
Academic Journal
Magnetophotoluminescence emissions were measured from modulation doped GaAs/AlGaAs asymmetric double quantum wells, wherein a thin barrier (25 Å) was sandwiched between a single quantum well (SQW) and a single heterojuction (SHJ). In the SQW, Landau level mixing is observed at the quantum Hall states. At ν<2, the lowest Landau level transition undergoes an exciton transition. For the SHJ region, the free carrier transitions become excitonic at the crossing point of the GaAs free exciton and the tunneling band gap shows a marked softening. An exciton-exciton interaction is shown to be responsible for the behavior of the subband energy levels in magnetic fields.


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