P-N junction with donor and acceptor encapsulated single-walled carbon nanotubes

Kato, Toshiaki; Hatakeyama, Rikizo; Shishido, Jun; Oohara, Wataru; Tohji, Kazuyuki
August 2009
Applied Physics Letters;8/24/2009, Vol. 95 Issue 8, p083109
Academic Journal
Ultimate one-dimensional heterojunctions of electron donor and acceptor materials have been realized within the inner hollow space of a single-walled carbon nanotube (SWNT). The heterojunction structures of Cs/I and Cs/C60 inside SWNTs (Cs/I@SWNTs, Cs/C60@SWNTs) yield the air-stable rectifying performance. Clear tunneling currents through the p-n junction barrier could be also detected only for Cs/I@SWNTs, which is explained by the difference of depletion layer structures. Based on a potential calculation, symmetrical and asymmetrical depletion layers were found to be formed in Cs/I@SWNTs and Cs/C60@SWNTs, respectively. Low temperature measurements also supply evidence of asymmetric depletion layer formation in Cs/C60@SWNTs.


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