Broadband blue superluminescent light-emitting diodes based on GaN

Feltin, E.; Castiglia, A.; Cosendey, G.; Sulmoni, L.; Carlin, J.-F.; Grandjean, N.; Rossetti, M.; Dorsaz, J.; Laino, V.; Duelk, M.; Velez, C.
August 2009
Applied Physics Letters;8/24/2009, Vol. 95 Issue 8, p081107
Academic Journal
We report on the achievement of III-nitride blue superluminescent light-emitting diodes on GaN substrates. The epitaxial structure includes an active region made of In0.12Ga0.88N quantum wells in a GaN/AlGaN waveguide. Superluminescence under cw operation is observed at room temperature for a current of 130 mA and a current density of 8 kA/cm2. The central emission wavelength is 420 nm and the emission bandwidth is ∼5 nm in the superluminescence regime. A peak optical output power of 100 mW is obtained at 630 mA under pulsed operation and an average power of 10 mW is achieved at a duty cycle of 20%.


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