Record pulsed power demonstration of a 2 μm GaSb-based optically pumped semiconductor laser grown lattice-mismatched on an AlAs/GaAs Bragg mirror and substrate

Yarborough, J. M.; Lai, Yi-Ying; Kaneda, Yushi; Hader, Jörg; Moloney, Jerome V.; Rotter, T. J.; Balakrishnan, G.; Hains, C.; Huffaker, D.; Koch, S. W.; Bedford, R.
August 2009
Applied Physics Letters;8/24/2009, Vol. 95 Issue 8, p081112
Academic Journal
An optically pumped semiconductor laser resonant periodic gain structure, grown lattice-mismatched on an AlAs/GaAs Bragg mirror, exhibits a peak pulsed power of 70 W when pumped with a pulsed 1064 nm neodymium doped yttrium aluminum garnet laser.


Related Articles

  • Effect of laser-assisted bleaching with Nd:YAG and diode lasers on shear bond strength of orthodontic brackets. Mirhashemi, Amirhossein; Emadian Razavi, Elham; Behboodi, Sara; Chiniforush, Nasim; Emadian Razavi, Elham Sadat // Lasers in Medical Science;Dec2015, Vol. 30 Issue 9, p2245 

    The aim of the present study was to assess the effect of laser-assisted bleaching with neodymium:yttrium-aluminum-garnet (Nd:YAG) and diode lasers on shear bond strength (SBS) of orthodontic brackets. One hundred and four extracted human premolars were randomly divided into four groups: group 1:...

  • Effect of pulse sharpening on imploding neon Z-pinch plasmas. Stephanakis, S. J.; Apruzese, J. P.; Burkhalter, P. G.; Davis, J.; Meger, R. A.; McDonald, S. W.; Mehlman, G.; Ottinger, P. F.; Young, F. C. // Applied Physics Letters;3/31/1986, Vol. 48 Issue 13, p829 

    The radial implosion of hollow, cylindrical neon gas columns, driven by currents of up to 1.45 MA, produces a linear Z pinch with over 70% of the radiation in neon K lines. A plasma erosion opening switch (PEOS) is used to eliminate prepulse and to reduce the current rise time from ∼60 to...

  • Dielectric liquids for possible use in pulsed power switches. Christophorou, L. G.; Faidas, H. // Applied Physics Letters;9/4/1989, Vol. 55 Issue 10, p948 

    Dielectric liquids for possible use as (opening/closing) switching materials in pulsed power technology are identified. A concept for a dielectric-liquid-pulsed-power switch employing flashlamps is outlined.

  • Diffraction-limited-beam, high-power operation from X-junction coupled phase-locked arrays of AlGaAs/GaAs diode lasers. Botez, D.; Hayashida, P.; Mawst, L. J.; Roth, T. J. // Applied Physics Letters;10/10/1988, Vol. 53 Issue 15, p1366 

    A novel type of phase-locked array is demonstrated. The device is a ten-element AlGaAs/GaAs array with both evanescent wave coupling as well as coupling via X-type junctions. The array selects and maintains operation in the highest order array mode of a ten-element device: mode L=10. Threshold...

  • Electron-beam pumped pulsed IR semiconductor laser based on a quantum-size InGaAs/AlGaAs structure. Zverev, M.; Gamov, N.; Zhdanova, E.; Ladugin, M.; Marmalyuk, A.; Peregoudov, D.; Studionov, V. // Optics & Spectroscopy;Aug2011, Vol. 111 Issue 2, p182 

    The characteristics of the radiation of a 890-nm laser based on a quantum-size InGaAs/AlGaAs structure, pumped by a (15-26)-keV electron beam, have been studied. An output pulsed power up to 90 W with an efficiency of 3.5% is obtained from each laser end face at room temperature of the active...

  • cw surface-emitting grating-coupled GaAs/AlGaAs distributed feedback laser with very narrow beam divergence. Mitsunaga, Kazumasa; Kameya, Masaaki; Kojima, Keisuke; Noda, Susumu; Kyuma, Kazuo; Hamanaka, Koichi; Nakayama, Takashi // Applied Physics Letters;6/22/1987, Vol. 50 Issue 25, p1788 

    Room-temperature cw operation of a GaAs/AlGaAs surface-emitting grating-coupled distributed feedback laser is reported. By using a transverse junction stripe scheme which provides a window structure for the surface-emitted light, cw surface emission having a very narrow beam divergence angle of...

  • High-reliability silicon microchannel submount for high average power laser diode arrays. Beach, R.; Mundinger, D.; Benett, W.; Sperry, V.; Comaskey, B.; Solarz, R. // Applied Physics Letters;5/21/1990, Vol. 56 Issue 21, p2065 

    A simple and highly reliable package consisting of a 1-cm-long AlGaAs laser diode array mounted directly on a silicon microchannel cooler has been demonstrated. 3.4×109 shots were logged on this device at an average optical output of 8.75 W with only a 6% increase in current required to hold...

  • Inductively generated, high voltage pulse using an electron beam controlled opening switch. Commisso, R. J.; Fernsler, R. F.; Scherrer, V. E.; Vitkovitsky, I. M. // Applied Physics Letters;11/15/1985, Vol. 47 Issue 10, p1056 

    An electron beam controlled opening switch with a conduction period of ∼1 μs has been used in an inductive store system to generate a 280-kV, 60-ns full width at half-maximum voltage pulse across an open circuit by interrupting a 10-kA discharge. The switch was pressurized to 5 atm with...

  • Continuous wave operation (77 K) of yellow (583.6 nm) emitting AlGaInP double heterostructure laser diodes. Hino, Isao; Kawata, Seiji; Gomyo, Akiko; Kobayashi, Kenichi; Suzuki, Tohru // Applied Physics Letters;3/3/1986, Vol. 48 Issue 9, p557 

    Continuous wave lasing operation with the shortest wavelength for semiconductor lasers was obtained from AlGaInP double heterostructure lasers at 77 K. The structure was grown by metalorganic vapor phase epitaxy. Lasing wavelength was 583.6 nm (yellow). Threshold current was 43 mA (1.9 kA/cm2)....


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics