TITLE

Effect of gate orientation on dc characteristics of Si-doped, nonpolar AlGaN/GaN metal-oxide semiconductor high electron mobility transistors

AUTHOR(S)
Chang, C. Y.; Wang, Yu-Lin; Gila, B. P.; Gerger, A. P.; Pearton, S. J.; Lo, C. F.; Ren, F.; Sun, Q.; Zhang, Yu.; Han, J.
PUB. DATE
August 2009
SOURCE
Applied Physics Letters;8/24/2009, Vol. 95 Issue 8, p082110
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Sc2O3/AlGaN/GaN metal-oxide-semiconductor (MOS) high electron mobility transistors were fabricated on (1120) a-plane, Si-doped epitaxial layers grown by metal organic chemical vapor deposition on (1 1_20) r-plane sapphire substrates. The gate finger direction was varied from parallel to the in-plane c-axis [0001] to the m-axis [1 01_0] direction perpendicular to the observed striations in surface morphology. The [0001] gate devices show lower drain-source current, mobility, and transconductance than their [1 01_0] counterparts, with a systematic dependence on gate finger direction. The symmetrical gate current-voltage characteristics and low gate current (∼3×10-9 A at ±5 V) confirm the effectiveness of the MOS gate, which is an attractive approach for these structures containing heavily Si-doped AlGaN.
ACCESSION #
43944852

 

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