Effect of strain on quantum efficiency of InAlN-based solar-blind photodiodes

Chen, Z. T.; Sakai, Y.; Zhang, J. C.; Egawa, T.; Wu, J. J.; Miyake, H.; Hiramatsu, K.
August 2009
Applied Physics Letters;8/24/2009, Vol. 95 Issue 8, p083504
Academic Journal
A series of InxAl1-xN-based Schottky solar-blind photodiodes are fabricated on the InxAl1-xN epilayers with high and very close crystal qualities. The quantum efficiency varies from 14.5% to 68.5%. The microstructure and strain state of epilayers are investigated in detail. It is found that the quantum efficiency of photodiode depends on the strain state in InxAl1-xN films. This indicates that adjusting the strain state in InxAl1-xN film is one of the promising approaches to optimize the performance of InAlN-based solar-blind photodiode.


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