Action potentials of HL-1 cells recorded with silicon nanowire transistors

Eschermann, Jan Felix; Stockmann, Regina; Hueske, Martin; Xuan Thang Vu; Ingebrandt, Sven; Offenhäusser, Andreas
August 2009
Applied Physics Letters;8/24/2009, Vol. 95 Issue 8, p083703
Academic Journal
Silicon nanowire (NW) transistors were fabricated in a top-down process. These devices were used to record the extracellular potential of the spontaneous activity of cardiac muscle HL-1 cells. Their signals were measured by direct dc sampling of the drain current. An improved signal-to-noise ratio compared to planar field-effect devices was observed. Furthermore the signal shape was evaluated and could be associated to different membrane currents. With these experiments, a qualitative description of the properties of the cell-NW contact was obtained and the suitability of these sensors for electrophysiological measurements in vitro was demonstrated.


Related Articles

  • Measurement of Pulsed Current–Voltage Characteristics of AlGaN/GaN HEMTs from Room Temperature to 15 K. LAURENT, T.; SHARMA, R.; TORRES, J.; NOUVEL, P.; BLIN, S.; PALERMO, C.; VARANI, L.; CORDIER, Y.; CHMIELOWSKA, M.; FAURIE, J.-P.; BEAUMONT, B. // Acta Physica Polonica, A.;Feb2011, Vol. 119 Issue 2, p196 

    We report measurements of the pulsed and dc current-voltage characteristics of AlGaN/GaN high- -electron-mobility transistors as functions of geometry, temperature (from 300 down to 15 K), and operating conditions. An increase in the drain current with shortening of the pulse width from 1 μs...

  • JFET-based dc/dc converter operates from 300-mV supply. Williams, Jim // EDN;5/25/2006, Vol. 51 Issue 11, p91 

    The article provides information on using a junction field effect transistor's (JFET) self-biasing characteristics to build a direct current/direct current converter that operates from power sources such as solar cells, thermopiles, and single-stage fuel cells, all of which deliver from 300 mV...

  • Robust input-output linearisation control of insulated gate bipolar transistor based voltage source converters for stabilisation of high voltage DC transmission link. Mallick, R. K.; Dash, P. K.; Nayak, N. // Australian Journal of Electrical & Electronic Engineering;2012, Vol. 9 Issue 4, p417 

    In this paper, a robust non-linear controller for a two-area voltage source converter high voltage DC (VSC-HVDC) transmission system is proposed subject to model uncertainties and external disturbances. The non-linear controller uses a robust feedback linearisation control for the voltage source...

  • Harmonic and Intermodulation Performance of Quantum-Wire-Transistor (QWT) Based Inverting Amplifier. Abuelma'atti, M.T. // Journal of Active & Passive Electronic Devices;2010, Vol. 5 Issue 3/4, p311 

    This paper presents a simple mathematical model for the gate-voltage/ drain-voltage transfer characteristic of the quantum-wire transistor (QWT)-based inverting amplifier. The model, basically a Fourier cosine-series, yields closed-form expressions for the amplitudes of the harmonic and...

  • Astable multivibrator lights LED from a single cell. Bruno, Luca // EDN;8/21/2008, Vol. 52 Issue 17, p53 

    The article discusses the use of a classic astable oscillator, a step-up direct current (dc)/dc converter to light the light-emitting diode (LED). The oscillator has transistors Q1 and Q2, which turn the transistor Q3 on and off. The inductor L1 inductor, in this set up, starts to charge with...

  • DUAL CONVERTER CONTROLLED SINGLE PHASE MATRIX CONVERTER FED DC DRIVE. Venkatasubramanian, D.; Natarajan, S. P.; Baskaran, B.; Suganya, S. // Journal of Engineering & Applied Sciences;Jun2012, Vol. 7 Issue 6, p672 

    This paper presents an application of Single Phase Matrix Converter (SPMC) as a dual converter. Pulse Width Modulation (PWM) techniques are used to calculate the switch duty ratio to synthesize the output. Chosen PWM technique incorporating wave shaping is also used to ensure continuous supply...

  • Analytic Model for Conduction Current in AlGaN/GaN HFETs/HEMTs. Danqiong Hou; Bilbro, Griff L.; Trew, Robert J. // Active & Passive Electronic Components;2012, p1 

    We have developed a new, zone-based compact physics-based AlGaN/GaN heterojunction field-effect transistor (HFET) model suitable for use in commercial harmonic-balance microwave circuit simulators. The new model is programmed in Verilog-A, an industry-standard compact modeling language. The new...

  • Transient study of self-heating effects in AlGaN/GaN HFETs: Consequence of carrier velocities, temperature, and device performance. Wu, Yuh-Renn; Singh, Jasprit // Journal of Applied Physics;6/1/2007, Vol. 101 Issue 11, p113712 

    GaN transistors offer a unique combination of high speed and high power. Devices capable of operating at close to 180 GHz can also be biased so that each electron may emit up to 100 phonons as it transits from source to drain. Therefore, strong heating effects in GaN transistors are expected. In...

  • Complementary-pair dc/dc converter simultaneously doubles, inverts supply voltage. Raman, Ajoy // EDN Europe;Oct2012, p9 

    The article informs about the complementary-pair direct current (dc) dc/dc converter. It has been informed that in this circuit design, a complementary pair of transistors, simultaneously implements a voltage doubler. Upper side of windings T1 is connected to ground, powered by PNP transistor Q1...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics