Size-induced metal-to-semiconductor transition and room temperature sequential resonant tunneling in La0.5Sr0.5CoO3-δ quantum dots embedded in La0.5Sr0.5CoO3-δ nanotubes

Wei Liu; Yu Chen; Zuci Quan; Shishang Guo; Meiya Li; Xing-Zhong Zhao
August 2009
Applied Physics Letters;8/24/2009, Vol. 95 Issue 8, p083125
Academic Journal
The sequential resonant tunneling in La0.5Sr0.5CoO3-δ (LSCO) semiconductor quantum dots (QDs) arrays were observed by current-voltage measurements under room temperature. A series of spikelike current peaks are found, which are resulted from the accumulation and depletion of electrons tunneling through the QDs embedded in insulated barriers. Temperature dependent onset-voltage blueshift and number variation in current peaks are also observed. These results confirm the size-induced metal-to-semiconductor transition in LSCO.


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