InGaN laser diodes with 50 mW output power emitting at 515 nm

Avramescu, Adrian; Lermer, Teresa; Müller, Jens; Tautz, Sönke; Queren, Désirée; Lutgen, Stephan; Strauß, Uwe
August 2009
Applied Physics Letters;8/17/2009, Vol. 95 Issue 7, p071103
Academic Journal
We demonstrate direct green laser operation from InGaN based diodes at wavelengths as long as 515.9 nm with 50 mW output power in pulse operation. A factor of ∼10 defect reduction for the In-rich InGaN quantum wells based on improvements of the epitaxial growth process and design of the active layers on c-plane GaN-substrates makes it possible to demonstrate laser operation at room temperature. Micrometer-scale photoluminescence mappings and electro-optical measurements confirm the reduction of nonradiative defects in the emitting layers. The 11 μm broad-area gain-guided laser structures were driven in pulse operation to minimize thermal effects and to accurately measure the laser temperature dependence. The threshold current density was ∼9 kA/cm2 and the fitted slope efficiency had a value of ∼130 mW/A for an optical output up to 50 mW.


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