Simultaneous two-level lasing in GaInAsSb/GaSb strained quantum-well lasers

Vizbaras, Kristijonas; Kashani-Shirazi, Kaveh; Amann, Markus-Christian
August 2009
Applied Physics Letters;8/17/2009, Vol. 95 Issue 7, p071107
Academic Journal
Simultaneous two-level lasing, corresponding to ground level and excited level transitions in GaInAsSb/GaSb quantum well lasers under continuous wave operation is reported. The effect is attributed to a slowed-down intersubband relaxation in the quantum wells due to buildup of hot phonon population resulting in an incomplete clamping of the excited state population above the ground level lasing threshold.


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