Origin of nanoscale potential fluctuations in two-dimensional semiconductors

Landrock, S.; Jiang, Y.; Wu, K. H.; Wang, E. G.; Urban, K.; Ebert, Ph.
August 2009
Applied Physics Letters;8/17/2009, Vol. 95 Issue 7, p072107
Academic Journal
We demonstrate a direct atomically resolved visualization and quantification of the impact of inhomogeneities in the dopant distribution on the nanoscale potential fluctuations in a two-dimensional semiconducting [formula] Ga overlayer on Si(111) using scanning tunneling microscopy. By a quantitative analysis, two regimes of the potential at nanometer scale are found, which arise from the local distribution of charge carriers in the bands and from electron-electron interactions.


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