TITLE

Universal scaling of semiconductor nanowires bandgap

AUTHOR(S)
Li, S.; Yang, G. W.
PUB. DATE
August 2009
SOURCE
Applied Physics Letters;8/17/2009, Vol. 95 Issue 7, p073106
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have established an analytical model to investigate the bandgap energy of III-V and II-V semiconductor nanowires (NWs) by taking size and surface effect into account and found that there is a universal scaling of bandgap between bandgap energy Eg and structural factor K of NWs, Eg∼K-1, which meaning that the bandgap energy of semiconductor NWs usually increases with the structural factor decreasing. This scaling rule has a general insight into the basic physics involved in size effect of semiconductor NWs bandgap.
ACCESSION #
43887447

 

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