TITLE

Nanoscale doping of InAs via sulfur monolayers

AUTHOR(S)
Ho, Johnny C.; Ford, Alexandra C.; Yu-Lun Chueh; Leu, Paul W.; Ergen, Onur; Takei, Kuniharu; Smith, Gregory; Majhi, Prashant; Bennett, Joseph; Javey, Ali
PUB. DATE
August 2009
SOURCE
Applied Physics Letters;8/17/2009, Vol. 95 Issue 7, p072108
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
One of the challenges for the nanoscale device fabrication of III-V semiconductors is controllable postdeposition doping techniques to create ultrashallow junctions. Here, we demonstrate nanoscale, sulfur doping of InAs planar substrates with high dopant areal dose and uniformity by using a self-limiting monolayer doping approach. From transmission electron microscopy and secondary ion mass spectrometry, a dopant profile abruptness of ∼3.5 nm/decade is observed without significant defect density. The n+/p+ junctions fabricated by using this doping scheme exhibit negative differential resistance characteristics, further demonstrating the utility of this approach for device fabrication with high electrically active sulfur concentrations of ∼8×1018 cm-3.
ACCESSION #
43887439

 

Related Articles

  • Secondary ion mass spectrometry study of Ti4+ diffusion properties in congruent Er:LiNbO3 codoped with moderate concentration of MgO. De-Long Zhang; Bei Chen; Liang Sun; Yu-Heng Xu; Yue-Bun Pun, Edwin // Journal of Materials Research;Oct2009, Vol. 24 Issue 10, p32 

    At 1100 °C, the diffusion properties of Ti4+ into congruent LiNbO3 crystals codoped with 0.5 mol% Er2O3 and different MgO concentrations of 0.5, 1.0, and 1.5 mol% have been studied by secondary ion mass spectrometry (SIMS). Three Y-cut and three Z-cut plates with different Mg doping levels...

  • Substrate misorientation induced strong increase in the hole concentration in Mg doped GaN grown by metalorganic vapor phase epitaxy. Suski, T.; Litwin-Staszewska, E.; Piotrzkowski, R.; Czernecki, R.; Krysko, M.; Grzanka, S.; Nowak, G.; Franssen, G.; Dmowski, L. H.; Leszczynski, M.; Perlin, P.; Łucznik, B.; Grzegory, I.; Jakieła, R. // Applied Physics Letters;10/27/2008, Vol. 93 Issue 17, p172117 

    We demonstrate that relatively small GaN substrate misorientation can strongly change hole carrier concentration in Mg doped GaN layers grown by metalorganic vapor phase epitaxy. In this work intentionally misoriented GaN substrates (up to 2° with respect to ideal <0001> plane) were employed....

  • Morphology and flexibility of graphene and few-layer graphene on various substrates. Stöberl, U.; Wurstbauer, U.; Wegscheider, W.; Weiss, D.; Eroms, J. // Applied Physics Letters;8/4/2008, Vol. 93 Issue 5, p051906 

    We report on detailed microscopy studies of graphene and few-layer graphene produced by mechanical exfoliation on various semiconducting substrates. We demonstrate the possibility to prepare and analyze graphene on (001)-GaAs, manganese p-doped (001)-GaAs, and InGaAs substrates. The morphology...

  • Patterned substrates to facilitate long-range ordering in the formation of nanoparticle monolayers by electrophoretic deposition. Krejci, Alex J.; Mandal, Jyotirmoy; Dickerson, James H. // Applied Physics Letters;7/23/2012, Vol. 101 Issue 4, p043117 

    Nanoparticle submonolayer and monolayer films were deposited using electrophoretic deposition onto silicon substrates that were patterned with arrays of hexagonally ordered polymeric structural elements. Line structures of four different lengths were fabricated on the substrates by electron-beam...

  • Influence of self-assembled monolayer binding group on graphene transistors. Cernetic, Nathan; Hutchins, Daniel O.; Hong Ma; Jen, Alex K.-Y. // Applied Physics Letters;1/12/2015, Vol. 106 Issue 2, p1 

    Graphene transistors on self-assembled monolayer (SAM) modified dielectric substrates were fabricated and characterized in order to determine the influence SAM binding group has on device properties. It was found that silane based alkyl SAMs had little to no influence in doping graphene...

  • Effect of a substrate on the composition, structure, and hardness of nitride and boride films produced by ion deposition methods. Ignatenko, P. I.; Terpiy, D. N.; Klyakhina, N. A. // Technical Physics;Jul2009, Vol. 54 Issue 7, p1027 

    The effect of the substrate material on the structural-phase state and hardness of nitride and boride films is studied by X-ray diffraction, electron microscopy, and secondaryon mass spectrometry. The degree of this effect is found to depend on the deposition method, which determines the energy...

  • Photoemission induced bias in two-dimensional silicon pn junctions. Lavayssière, M.; Renault, O.; Mariolle, D.; Veillerot, M.; Barnes, J. P.; Hartmann, J. M.; Leroy, J.; Barrett, N. // Applied Physics Letters;11/14/2011, Vol. 99 Issue 20, p202107 

    Spectroscopic x-ray photoelectron emission microscopy was used to study the role of the pn junction on imaging of micron scale n- and p-doped silicon patterns epitaxially grown on p- and n-type substrates, respectively. In the closed n-doped patterns, contrast with respect to open patterns is...

  • Growth and patterning of GaAs/Ge single crystal layers on Si substrates by molecular beam epitaxy. Sheldon, P.; Jones, K. M.; Hayes, R. E.; Tsaur, B-Y.; Fan, John C. C. // Applied Physics Letters;1984, Vol. 45 Issue 3, p274 

    Single crystal GaAs layers have been grown on Si substrates with an intermediate Ge layer. Both the Ge and subsequent GaAs are grown in situ by molecular beam epitaxy (MBE). Cross-sectional transmission electron microscopy studies show GaAs surface dislocation densities on the order of 107 cm-2....

  • Advanced Monitoring for Nanoimprint Lithography. Hocheng, H.; Hsu, W. H. // AIP Conference Proceedings;1/17/2011, Vol. 1315 Issue 1, p1237 

    Nanoimprint lithography has the advantages of high throughput, sub-10-nm feature and low cost. A problem of incomplete filling rate is, however, encountered in the imprinting process and needs to be understood for pattern fidelity. The filling rate is often measured with a scanning electron...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics