100 ps precessional spin-transfer switching of a planar magnetic random access memory cell with perpendicular spin polarizer

Papusoi, C.; Delaët, B.; Rodmacq, B.; Houssameddine, D.; Michel, J.-P.; Ebels, U.; Sousa, R. C.; Buda-Prejbeanu, L.; Dieny, B.
August 2009
Applied Physics Letters;8/17/2009, Vol. 95 Issue 7, p072506
Academic Journal
Ultrafast spin-transfer precessional switching between two stable states of a magnetic random access memory device is demonstrated in structures comprising a perpendicularly magnetized polarizing layer (PL⊥), an in-plane magnetized free layer (FL), and an in-plane magnetized analyzing layer (AL) in a PL⊥/spacer/FL/spacer/AL stack. Back and forth switching can be achieved with sub-ns current pulses of the same polarity. The spin-torque influence from the analyzer leads to an asymmetric dependence of the switching properties as a function of the current sign and initial state.


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