TITLE

Current-induced spin polarization in gallium nitride

AUTHOR(S)
Koehl, W. F.; Wong, M. H.; Poblenz, C.; Swenson, B.; Mishra, U. K.; Speck, J. S.; Awschalom, D. D.
PUB. DATE
August 2009
SOURCE
Applied Physics Letters;8/17/2009, Vol. 95 Issue 7, p072110
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Electrically generated spin polarization is probed directly in bulk GaN using Kerr rotation spectroscopy. A series of n-type GaN epilayers are grown in the wurtzite phase both by molecular beam epitaxy and metalorganic chemical vapor deposition with a variety of doping densities chosen to broadly modulate the transverse spin lifetime, T2*. The spin polarization is characterized as a function of electrical excitation energy over a range of temperatures. Despite weak spin-orbit interactions in GaN, a current-induced spin polarization is observed in the material at temperatures of up to 200 K.
ACCESSION #
43887434

 

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