High resolution photoemission study of SiOx/Si(111) interface disruption following in situ HfO2 deposition

McDonnell, Stephen; Brennan, Barry; Hughes, Greg
August 2009
Applied Physics Letters;8/17/2009, Vol. 95 Issue 7, p072903
Academic Journal
We report on an in situ high resolution core level photoemission study of the early stages of interface formation between an ultrathin SiOx layer (∼0.3 nm) grown on the atomically clean Si(111) surface and a HfO2 dielectric layer. Si 2p core level spectra acquired at 130 eV photon energy reveal evidence of a chemically shifted component on the lower binding energy side of the substrate peak which is attributed to interface defect states resulting from the incorporation of silicon atoms from the substrate into the interfacial oxide at room temperature. This evidence of Si/SiOx interface disruption would be expected to increase charge carrier scattering mechanisms in the silicon and contribute to the generally observed mobility degradation in high-k stacks with ultrathin silicon oxide interface layers.


Related Articles

  • Enhanced annealing of implantation-induced defects in 4H-SiC by thermal oxidation. Lo\vlie, L. S.; Svensson, B. G. // Applied Physics Letters;1/31/2011, Vol. 98 Issue 5, p052108 

    Annealing of the prominent Z1/2 defect in 4H-SiC has been studied after thermal treatment in N2 and O2 atmospheres at 1150 °C subsequent to implantation with MeV Si-ions to doses in the range of (1-4)×108 cm-2. The annealing rate is found to be significantly enhanced under oxidizing...

  • Ag/PbTe(111) interface behavior studied by photoemission spectroscopy. Wu, H. F.; Zhang, H. J.; Lu, Y. H.; Si, J. X.; Li, H. Y.; Bao, S. N.; Wu, H. Z.; He, P. // Applied Physics Letters;3/24/2008, Vol. 92 Issue 12, p122112 

    We performed investigations on the formation of Ag/PbTe(111) interface by using photoemission spectroscopy. Upon initial Ag deposition, both Pb 4f and Te 3d core levels and the valence-band edge showed shifts to high binding energy, from which the band bending at Ag/PbTe(111) is determined to be...

  • Spectroscopic evidence of in-gap states at the SrTiO3/LaAlO3 ultrathin interfaces. Drera, G.; Banfi, F.; Canova, F. Federici; Borghetti, P.; Sangaletti, L.; Bondino, F.; Magnano, E.; Huijben, J.; Huijben, M.; Rijnders, G.; Blank, D. H. A.; Hilgenkamp, H.; Brinkman, A. // Applied Physics Letters;1/31/2011, Vol. 98 Issue 5, p052907 

    Experimental evidence of differences in the electronic properties of an insulating and a conducting SrTiO3/LaAlO3 interface is provided by soft x-ray spectroscopies. While core level photoemission measurements show that only at the conducting interface Ti ions with 3+ ionization state are...

  • Observation of band bending of metal/high-k Si capacitor with high energy x-ray photoemission spectroscopy and its application to interface dipole measurement. Kakushima, K.; Okamoto, K.; Tachi, K.; Song, J.; Sato, S.; Kawanago, T.; Tsutsui, K.; Sugii, N.; Ahmet, P.; Hattori, T.; Iwai, H. // Journal of Applied Physics;Nov2008, Vol. 104 Issue 10, p104908 

    Band bendings of Si substrates have been observed using hard x-ray photoemission spectroscopy. With a capability of collecting photoelectrons generated as deep as 40 nm, the binding energy shift in a core level caused by the potential profile at the surface of the substrate results in a spectrum...

  • Comment on: 'Random telegraph signals arising from fast interface states in.... Uren, M.J.; Ming-Horn Tsai // Applied Physics Letters;9/6/1993, Vol. 63 Issue 10, p1443 

    Comments on the mensuration of random telegraph signals (RTS) from fast silicon-silicon oxide interface states from slow states. Use of high sampling rates; Features of RTS published earlier; Description of interface states with common chemical nature and environment.

  • Direct SiO[sub 2]/beta-SiC(100)3x2 interface formation from 25 degree Centigrade to 500 degree.... Semond, F.; Douillard, L. // Applied Physics Letters;4/8/1996, Vol. 68 Issue 15, p2144 

    Examines direct silicon dioxide/beta-silicon carbon interface formation at 25 degrees to 500 degrees Centigrade. Investigation by core level and valence band photoemission spectroscopies; Significance of low molecular oxygen exposures to surface reconstruction; Enhancement of silicon dioxide...

  • Extraction of trap states in laser-crystallized polycrystalline-silicon thin-film transistors and analysis of degradation by self-heating. Kimura, Mutsumi; Inoue, Satoshi; Shimoda, Tatsuya; Tam, Simon W.-B.; Lui, O. K. Basil; Migliorato, Piero; Nozawa, Ryoichi // Journal of Applied Physics;3/15/2002, Vol. 91 Issue 6, p3855 

    Trap states at the oxide-silicon interface and grain boundary in laser-crystallized polycrystalline-silicon thin-film transistors were extracted. The oxide-silicon interface traps and grain boundary traps can be extracted using the low-frequency capacitance–voltage characteristic and...

  • Interface mechanics of adhesiveless microtransfer printing processes. Kim-Lee, H.-J.; Carlson, A.; Grierson, D. S.; Rogers, J. A.; Turner, K. T. // Journal of Applied Physics;2014, Vol. 115 Issue 14, p143513-1 

    Microtransfer printing is a versatile process for retrieving, transferring, and placing nanomembranes of various materials on a diverse set of substrates. The process relies on the ability to preferentially propagate a crack along specific interfaces at different stages in the process. Here, we...

  • Hybrid stretchable circuits on silicone substrate. Robinson, A.; Aziz, A.; Liu, Q.; Suo, Z.; Lacour, S. P. // Journal of Applied Physics;2014, Vol. 115 Issue 14, p143511-1 

    When rigid and stretchable components are integrated onto a single elastic carrier substrate, large strain heterogeneities appear in the vicinity of the deformable-non-deformable interfaces. In this paper, we report on a generic approach to manufacture hybrid stretchable circuits where...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics