Crystallization times of Ge–Te phase change materials as a function of composition

Raoux, S.; Cheng, H.-Y.; Caldwell, M. A.; Wong, H.-S. P.
August 2009
Applied Physics Letters;8/17/2009, Vol. 95 Issue 7, p071910
Academic Journal
The crystallization times of Ge–Te phase change materials with variable Ge concentrations (29.5–72.4 at. %) were studied. A very strong dependence of the crystallization time on the composition for as-deposited, amorphous films was confirmed, with a minimum for the stoichiometric composition GeTe. The dependence is weaker for melt-quenched, amorphous material and crystallization times are between one to almost four orders of magnitude shorter than for as-deposited materials. This is promising for applications because recrystallization from the melt-quenched phase is the relevant process for optical and solid state memory, and fast crystallization and weak dependence on compositional variations are desirable.


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