Effect of hydrostatic pressure in degenerate Ge1-xMnxTe

Lim, S. T.; Bi, J. F.; Teo, K. L.; P, Feng Y.; Liew, T.; Chong, T. C.
August 2009
Applied Physics Letters;8/17/2009, Vol. 95 Issue 7, p072510
Academic Journal
We utilize the effect of hydrostatic pressure to investigate the magnetotransport properties of degenerate p-Ge1-xMnxTe (x=0.10) ferromagnetic semiconductor. The Curie temperature was found to increase with pressure as 0.27 K/kbar, which can be understood on the basis of the Ruderman–Kittel–Kasuya–Yosida (RKKY) interaction mechanism. For sufficiently high carrier concentration of po∼1021 cm-3, both the light holes from the L valence band and the heavy holes from the Σ valence band contribute to the RKKY interaction. Additionally, a negative magnetoresistance is observed at low temperature and is found to decrease with pressure.


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