TITLE

Performance analysis of InP nanowire band-to-band tunneling field-effect transistors

AUTHOR(S)
Khayer, M. Abul; Lake, Roger K.
PUB. DATE
August 2009
SOURCE
Applied Physics Letters;8/17/2009, Vol. 95 Issue 7, p073504
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Understanding the effect of material choice and nanowire (NW) diameter on drive current and leakage current is critical for a NW band-to-band tunneling (BTBT) field-effect transistor (FET) in the cold carrier injection regime. This letter presents theoretical investigation on drive currents and leakage currents of prototypical InP NW BTBT FETs based on calculating the imaginary wave vector in the bandgap as a function of NW diameter. The tunneling current in InP NW BTBT FETs, which show potential for applications in high-speed, high-power electronic devices, is investigated as a function of NW diameter and electric field.
ACCESSION #
43887403

 

Related Articles

  • High-Performance Wrap-Gated InGaAs Nanowire Field-Effect Transistors with Sputtered Dielectrics. Shen, Li-Fan; Yip, SenPo; Yang, Zai-xing; Fang, Ming; Hung, TakFu; Pun, Edwin Y.B.; Ho, Johnny C. // Scientific Reports;11/27/2015, p16871 

    Although wrap-gated nanowire field-effect-transistors (NWFETs) have been explored as an ideal electronic device geometry for low-power and high-frequency applications, further performance enhancement and practical implementation are still suffering from electron scattering on nanowire...

  • Nonlinear optical spectroscopy: On the tracks of carrier transport. Gracias, David // Nature Photonics;Oct2007, Vol. 1 Issue 10, p570 

    The article discusses optical methods to probe electric fields in organic transistors in situ during operation. Organic semiconductors enable the possibility of solution-based processing of a variety of electronic devices including organic field-effect transistors (OFET), sensors and...

  • Strong room-temperature negative transconductance in an axial Si/Ge hetero-nanowire tunneling field-effect transistor. Peng Zhang; Le, Son T.; Xiaoxiao Hou; Zaslavsky, A.; Perea, Daniel E.; Dayeh, Shadi A.; Picraux, S. T. // Applied Physics Letters;8/11/2014, Vol. 105 Issue 6, p1 

    We report on room-temperature negative transconductance (NTC) in axial Si/Ge hetero-nanowire tunneling field-effect transistors. The NTC produces a current peak-to-valley ratio >45, a high value for a Si-based device. We characterize the NTC over a range of gate VG and drain VD voltages, finding...

  • Tunnel field-effect transistor without gate-drain overlap. Verhulst, Anne S.; Vandenberghe, William G.; Maex, Karen; Groeseneken, Guido // Applied Physics Letters;7/30/2007, Vol. 91 Issue 5, p053102 

    Tunnel field-effect transistors are promising successors of metal-oxide-semiconductor field-effect transistors because of the absence of short-channel effects and of a subthreshold-slope limit. However, the tunnel devices are ambipolar and, depending on device material properties, they may have...

  • Silicon nanowire tunneling field-effect transistors. Björk, M. T.; Knoch, J.; Schmid, H.; Riel, H.; Riess, W. // Applied Physics Letters;5/12/2008, Vol. 92 Issue 19, p191107 

    We demonstrate the implementation of tunneling field-effect transistors (TFETs) based on silicon nanowires (NWs) that were grown using the vapor-liquid-solid growth method. The Si NWs contain p-i-n+ segments that were achieved by in situ doping using phosphine and diborane as the n- and p-type...

  • eGaN® FET-Silicon Shoot Out Vol. 11: Optimizing FET On-Resistance. STRYDOM, JOHAN // Power Electronics Technology;Oct2012, Vol. 39 Issue 10, p28 

    The article focuses on eGaN Field Effect Transistors-Silicon power shootout series and mentions about the die size optimization process and an example application which shows specific results. It mentions that the designers can efficiently ascertain optimal eGaN Field Effect Transistors by...

  • Metal-oxide-semiconductor field-effect transistor with a vacuum channel. Srisonphan, Siwapon; Jung, Yun Suk; Kim, Hong Koo // Nature Nanotechnology;Aug2012, Vol. 7 Issue 8, p504 

    High-speed electronic devices rely on short carrier transport times, which are usually achieved by decreasing the channel length and/or increasing the carrier velocity. Ideally, the carriers enter into a ballistic transport regime in which they are not scattered. However, it is difficult to...

  • Axial bandgap engineering in germanium-silicon heterostructured nanowires. Dayeh, Shadi A.; Dickerson, Robert M.; Picraux, S. Thomas // Applied Physics Letters;9/12/2011, Vol. 99 Issue 11, p113105 

    Large composition changes along the nanowire axial direction provide an additional degree of freedom for tailoring charge transport in semiconductor devices. We utilize 100% axial composition modulated germanium to silicon semiconductor nanowires to demonstrate bandgap-engineered Schottky...

  • Modeling and performance analysis of GaN nanowire field-effect transistors and band-to-band tunneling field-effect transistors. Khayer, M. Abul; Lake, Roger K. // Journal of Applied Physics;Nov2010, Vol. 108 Issue 10, p104503 

    The real and imaginary bandstructures of deeply scaled GaN nanowire (NW) field-effect transistors (FETs) are calculated with an eight-band k·p model. Analysis of the transport properties of both GaN NW FETs and NW band-to-band tunneling FETs (TFETs) is presented. Deeply scaled n-type GaN NW...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics