High-temperature thermal resistors based on silicon carbide

Avramenko, S.; Kiselev, V.; Pavlenko, A.
August 1996
Review of Scientific Instruments;Aug1996, Vol. 67 Issue 8, p2966
Academic Journal
Presents the technique of high-temperature cheap thermal resistor fabrication based on polycrystal and fast neutron irradiated silicon carbide single crystals. Operating temperature range; Applications of temperature sensors; Appropriateness of silicon carbide as semiconductor materials for extreme conditions.


Related Articles

  • Effect of carbon and silicon carbide on the properties of carboxylated refractories. Suvorov, S.; Duka, A. // Refractories & Industrial Ceramics;Mar2007, Vol. 48 Issue 2, p103 

    The interrelation between the content of carbon and silicon carbide and the properties of carboxylated refractories (porosity, mechanical strength, heat resistance, resistance to the action of blast-furnace slag) is studied. Dependences of the properties of carboxylated refractories on their...

  • Effect of SiC-Filler Refinement by Different Methods on Heat-Resistant Medium-Cement Concrete Properties. Pundiene, I.; Prantskevichene, I.; Kairite, A. // Refractories & Industrial Ceramics;Jul2018, Vol. 59 Issue 2, p156 

    Results are provided for a study of the properties of SiC refined by different methods (milling and disintegration) on morphology of the particles obtained. It is established that SiC refinement by disintegration in an amount of 10 - 20% within the composition of heat-resistant concrete compared...

  • Thermal Characterization of Polycrystalline SiC. Li, L.-G.; Lotfi, S.; Vallin, Ö.; Olsson, J. // Journal of Electronic Materials;Apr2014, Vol. 43 Issue 4, p1150 

    A study is made using fabricated thermal resistors in combination with two-dimensional (2D) electrothermal simulations to determine the thermal conductivity of polycrystalline SiC, single-crystalline SiC, and Si. The results show that the poly-SiC substrate has thermal conductivity of κ = 2.7...

  • Room Temperature Photoluminescence of Polycrystalline SiC Prepared from Carbon-Saturated Si Melt. Ma, Jianping; Chen, Zhiming; Lu, Gang; Yu, Mingbin; Hang, Lianmao; Feng, Xianfeng; Lei, Tianmin // International Journal of Modern Physics B: Condensed Matter Phys;3/20/2002, Vol. 16 Issue 6/7, p1047 

    Intense photoluminescence (PL) has been observed at room temperature from the polycrystalline SiC samples prepared from carbon-saturated Si melt at a temperature ranging from 1500 to 1650°C. Composition and structure of the samples have been confirmed by means of X-ray photoelectron...

  • High-pressure, high-temperature synthesis of SiC-diamond nanocrystalline ceramics. Ekimov, E. A.; Ekimov, E.A.; Gavriliuk, A. G.; Gavriliuk, A.G.; Palosz, B.; Gierlotka, S.; Dluzewski, P.; Tatianin, E.; Kluev, Yu.; Naletov, A. M.; Naletov, A.M.; Presz, A. // Applied Physics Letters;8/14/2000, Vol. 77 Issue 7 

    Dense and entirely nanocrystalline diamond-SiC ceramics were synthesized by the infiltration of liquid Si into the nanodiamond body under high-pressure (77 kbar) and high-temperature (1400-2000 °C) conditions. Based on x-ray diffraction and transmission electron microscopy observations, a...

  • Characterization and Simulation of Neutron Irradiated JBS Silicon Carbide Diode Structures. Popelka, Stanislav; Hazdra, Pavel; Záhlava, Vít // Key Engineering Materials;2014, Vol. 605, p151 

    The effect of radiation damage produced by fast neutrons on characteristics of JBS diodes produced on 4H-SiC epilayers was investigated. 1200V JBS diodes from Cree were irradiated in nuclear reactor by fast neutrons with fluences ranging from 1.3x1013 to 4x1014 cm-2 (1MeV NIEL equivalent in Si)....

  • Effects of repeated high-temperature cycles on the thermal contact resistance of bimetallic finned tubes. Piir, A. É.; Roshchin, S. P.; Vereshchagin, A. Yu.; Kuntysh, V. B.; Minnigaleev, A. Sh. // Chemical & Petroleum Engineering;Sep2007, Vol. 43 Issue 9/10, p519 

    Measurements have been made on the thermal contact resistance (TCR) in repeated cycles of heating to 270°C and cooling to 50°C in experimental specimens of bimetallic finned tubes having roll and strip fins. Tenfold heating-cooling cycles increase the TCR of these tubes in the cold state...

  • Heat seekers: Collaboration to design high-temperature silicon carbide integrated circuits. Baker, Berenice // Engineer (00137758);10/27/2008, Vol. 293 Issue 7759, p10 

    The article reports on the development of a high-temperature silicon carbide (SiC) integrated circuits that could operate in temperature of up to 450 degree celsius, in collaboration with Raytheon System Ltd. (RSL) and Strathclyde University in Great Britain. RSL process technology manager Robin...

  • Studies on the thermal stability of nano-SiC powder with excessive free carbon by TG-DTA-MS, XRD and TEM. Hui-Mei, Y.; Chang-Wei, L.; Ling-Jun, Q.; Hua-Qing, X.; Tong-Geng, X.; Lan, L. // Journal of Thermal Analysis & Calorimetry;Sep2006, Vol. 85 Issue 3, p657 

    We studied the removal process of excessive free carbon in the nano-SiC powder by TG-DTA-MS, XRD and TEM three methods. The studies showed that the temperature of removing excessive free carbon in the nano-SiC powder should be about 750�C in air.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics