Alternating techniques to measure magnetoresistance effects with a sensitivity of 2 p... under 3

Dauguet, P.; Gandit, P.; Chaussy, J.
August 1996
Review of Scientific Instruments;Aug1996, Vol. 67 Issue 8, p2877
Academic Journal
Presents two methods developed to measure variations with magnetic field of electrical resistances of a specific range for applied magnetic fields and for a specific temperature. Measurement of the magnetoresistance of a magnetic multilayer with the current applied perpendicular to the multilayer plane; Other applications of the devices presented.


Related Articles

  • Large magnetoresistance in high mobility topological insulator Bi2Se3. Yan, Yuan; Wang, Li-Xian; Yu, Da-Peng; Liao, Zhi-Min // Applied Physics Letters;7/15/2013, Vol. 103 Issue 3, p033106 

    We report the magnetotransport properties of individual Bi2Se3 nanoplates. The carrier Hall mobility is up to 104 cm2/Vs. A large positive linear magnetoresistance (MR) approaching to 400% without sign of saturation was observed at 14 T. By angular dependence measurements, we demonstrate that...

  • Giant magnetoresistance in TI2Mn2O7 with the pyrochlore... Shimakawa, Y.; Kubo, Y. // Nature;1/4/1996, Vol. 379 Issue 6560, p53 

    Reports on materials exhibiting giant magnetoresistance (GMR) which undergo a large change in electrical resistance in response to an applied magnetic field. What is GMR; Observations of GMR on TI2Mn2O7; Structure of GMR; Findings from observations.

  • Erratum: "Tuning spin transport properties and molecular magnetoresistance through contact geometry" [J. Chem. Phys. 140, 044716 (2014)].  // Journal of Chemical Physics;6/14/2014, Vol. 140 Issue 22, p229903-1 

    A correction to the article "Tuning spin transport properties and molecular magnetoresistance through contact geometry" that was published online in the June 13, 2014 issue is presented.

  • Magnetoresistance measurement of unpatterned magnetic tunnel junction wafers by current-in-plane tunneling. Worledge, D. C.; Trouilloud, P. L. // Applied Physics Letters;7/7/2003, Vol. 83 Issue 1, p84 

    We demonstrate a method for measuring magnetoresistance (MR) and resistance area product (RA) of unpatterned magnetic tunnel junction film stacks. The RA is measured by making a series of four point probe resistance measurements on the surface of an unpatterned wafer at various probe spacings....

  • Giant magnetoresistance multilayers of high thermal stability with thicker magnetic layers. Hossain, S. A.; Pirkle, B. H.; Yang, J.; Parker, M. R. // Journal of Applied Physics;4/15/1996, Vol. 79 Issue 8, p5817 

    Describes a methodology for the improvement of thermal stability of giant megnetoresistive (GMR) NiFeCo/Cu multilayers. Impact of high-temperature anneal on GMR magnitude and field sensitivity; Details of the experimental techniques used.

  • Real-time observation of electrical vortex core switching. Nakano, Kunihiro; Tanabe, Kenji; Hiramatsu, Ryo; Chiba, Daichi; Ohshima, Norikazu; Kasai, Shinya; Sato, Tomonori; Nakatani, Yoshinobu; Sekiguchi, Koji; Kobayashi, Kensuke; Ono, Teruo // Applied Physics Letters;2/18/2013, Vol. 102 Issue 7, p072405 

    A single vortex-core switching induced by current injection into a ferromagnetic disk is detected in real time using a three-terminal device with the tunneling magnetoresistance junction. The real time observation reveals that the electrical core switching is completed within a few 100 ps. It is...

  • Tunable tunneling magnetoresistance in a ferromagnet-metal-insulatorferromagnet tunneling junction. Sui-Pin Chen // Journal of Applied Physics;May2010, Vol. 107 Issue 9, p09C716-1 

    The tunneling magnetoresistance (TMR) ratio is investigated in a ferromagnet- metal-insulator-ferromagnet planar tunneling junction by use of the spin-polarized free-electron model. In this paper, the bias voltage is exploited to alter the tunneling direction and to tune the barrier height of...

  • Analytical Expression of the Kapitza Magnetoresistance Law. Sirota, N. N. // Doklady Physics;Jan2004, Vol. 49 Issue 1, p25 

    Examines the analytical expression for the empirical Kapitza law. Method of production of strong magnetic fields proposed by Kapitza; Variation of magnetoresistance of metals; Establishment of regularity for the field dependence of the specific electric resistance of metals; Formulation of a...

  • Change in the sign of the magnetoresistance effect in bilayer superconductor/ferromagnet structures under change in the type of the domain structure in the ferromagnet. Rusanov, A. Yu.; Golikova, T. E.; Egorov, S. V. // JETP Letters;Apr2008, Vol. 87 Issue 3, p175 

    The magnetoresistance effects in the bi- and trilayer hybrid planar superconductor/ferromagnet (S/F) structures based on Py (permalloy) and Nb near the superconducting transition temperature T C are considered. It has been experimentally shown that the sign of the observed magnetoresistance...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics