Simple, extremely low resistance contact system to n-InP that does not exhibit

Weizer, Victor G.; Fatemi, Navid S.
May 1993
Applied Physics Letters;5/24/1993, Vol. 62 Issue 21, p2731
Academic Journal
Presents an extremely low resistance contact system to n-indium phosphide. Absence of metal-semiconductor intermixing during sintering; Effect of germanium on metallurgical interaction; Result of retarded entry of indium into the contacting gold.


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