TITLE

Controlling of Schottky barrier heights for Au/n-GaAs and Ti/n-GaAs with hydrogen introduced

AUTHOR(S)
Jin, S.X.; Wang, H.P.; Yuan, M.H.; Song, H.Z.; Wang, H.; Mao, W.L.; Qin, G.G.; Ze-ying Ren; Bing-Chen Li; Xiong-Wei Hu; Guo-Sheng Sun
PUB. DATE
May 1993
SOURCE
Applied Physics Letters;5/24/1993, Vol. 62 Issue 21, p2719
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the effect of introducing hydrogen into Schottky barriers of gold/n-gallium arsenide (GaAs) and titanium/n-GaAs. Display of zero/reverse bias annealing effect; Importance of selecting temperature for plasma hydrogen treatment; Location of the effective hydrogen.
ACCESSION #
4375198

 

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