Observation of quantum confinement effects in strained Si[sub 0.84]Ge[sub 0.16]/Si quantum wells

Chen, Y.F.; Dai, Y.T.; Chou, H.P.; Chang, D.C.; Chang, C.Y.; Wang, P.J.
May 1993
Applied Physics Letters;5/24/1993, Vol. 62 Issue 21, p2713
Academic Journal
Examines quantum confinement effects in strained Si[sub 0.84]Ge[sub 0.16]/Si quantum wells at room temperature. Use of photothermal deflection spectroscopy (PDS) technique; Dependence of the PDS signal phase on the localization of the absorption effective center; Band gaps obtained from the amplitudes.


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