Heteroepitaxial growth of InP/In[sub 0.52]Ga[sub 0.48]As structures on GaAs (100) by gas-source

Chin, T.P.; Tu, C.W.
May 1993
Applied Physics Letters;5/24/1993, Vol. 62 Issue 21, p2708
Academic Journal
Examines the heteroepitaxial growth of InP/In[sub 0.52]Ga[sub 0.48]As quantum wells on gallium arsenide. Use of InGaAs and InP in optoelectronic devices; Integration of optoelectronic devices with GaAs technology; Control of threading dislocations to obtain InGaAs.


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