Microstructural analysis of nickel silicide formed by nickel/silicon-on-oxide annealing

Yang, H.; Pinizzotto, R.F.; Lou, L.; Namavar, F.
May 1993
Applied Physics Letters;5/24/1993, Vol. 62 Issue 21, p2694
Academic Journal
Analyzes the microstructures of crystalline nickel (Ni) disilicide thin films on silicon-on-oxide substrates. Formation of nickel silicide films in metallic nickel; Observation of twin boundaries at the silicide/oxide interface; Prevention of Ni diffusion by the oxide layer.


Related Articles

  • Stability of NiSi2 and CoSi2 in contact with their free metal. Cahoon, E. C.; Comrie, C. M.; Pretorius, R. // Applied Physics Letters;1984, Vol. 44 Issue 5, p511 

    Rutherford backscattering has been used to study metal/disilicide thin-film interactions for Ni and Co. Upon heating, the metal reacted with disilicide to produce the phase M2Si in both cases. On further heating the M2Si itself reacted with the disilicide to form MSi. In the case of Co it was...

  • Influence of microstructure on the resistivity of MoSi2 thin films. van Ommen, A. H.; Reader, A. H.; de Vries, J. W. C. // Journal of Applied Physics;10/1/1988, Vol. 64 Issue 7, p3574 

    Presents a study which analyzed the influence of microstructure on the resistivity of MoSi[sub2] thin films. Source of the formation of the Hall effect in the films; Mechanism by which the stacking faults influence the electrical properties of the thin films and other refractory metal...

  • Structural and morphological investigations on DC-magnetron-sputtered nickel films deposited on Si (100). Geetha Priyadarshini, B.; Aich, S.; Chakraborty, M. // Journal of Materials Science;May2011, Vol. 46 Issue 9, p2860 

    Pure nickel thin films were deposited on Si (100) substrates under different conditions of sputtering using direct current magnetron sputtering from a nickel metal target. The different deposition parameters employed for this study are target power, argon gas pressure, substrate temperature and...

  • Combined XRR and RS Measurements of Nickel Silicide Films. Gonchond, J.-P.; Wyon, C.; Cacho, F.; Braeckelmann, G.; Rolland, G.; Kwakman, L. F. Tz.; Tsach, Y.; Agnihotri, D. K.; Formica, J. P. // AIP Conference Proceedings;2005, Vol. 788 Issue 1, p182 

    X ray reflectivity (XRR) is shown to be well suited to measure the thickness of NiSi films annealed at different temperatures. The phase transformation during the silicide reaction at different spike annealing temperatures (310°C–450°C) has been characterized by measuring the sheet...

  • Morphological stability and specific resistivity of sub-10 nm silicide films of Ni1-xPtx on Si substrate. Zhen Zhang; Shi-Li Zhang; Bin Yang; Yu Zhu; Rossnagel, Stephen M.; Gaudet, Simon; Kellock, Andrew J.; Jordan-Sweet, Jean; Lavoie, Christian // Applied Physics Letters;2/15/2010, Vol. 96 Issue 7, p071915 

    This letter studies the morphological stability and specific resistivity of sub-10 nm silicide films of Ni, Ni0.95Pt0.05, and Ni0.9Pt0.1 formed on Si(100) substrate. When the deposited metal films are below 1 to 4 nm in thickness depending on the Pt content, the resultant silicide films tend to...

  • Linear growth of Ni2Si thin film on n+/p junction at low temperature. Yu-Long Jiang; Guo-Ping Ru; Xin-Ping Qu; Bing-Zong Li; Detavernier, Christophe; Van Meirhaeghe, R. L. // Journal of Materials Research;Dec2006, Vol. 21 Issue 12, p8 

    Nickel mono-silicide has been considered a promising silicide candidate for sub-90 nm nodes of integrated circuits manufacturing. To form high-quality nickel mono-silicide as source/drain contact electrodes, a two-step low temperature rapid thermal process has been proposed, in which the...

  • Comparison of the annealing behavior of thin Ta films deposited onto Si and SiO2 substrates. Hübner, R.; Hecker, M.; Mattern, N.; Hoffmann, V.; Wetzig, K.; Engelmann, H.-J.; Zschech, E. // Analytical & Bioanalytical Chemistry;Jun2004, Vol. 379 Issue 4, p568 

    Structural changes at annealing temperatures (Tan) of 500–1,100°C were investigated for thin Ta films which were sputter-deposited onto pure Si substrates and onto thermally oxidized Si. In the as-deposited state, the Ta layers predominantly consist of metastable tetragonal β-Ta,...

  • Ni-Si(111) interface: Growth of Ni2Si islands at room temperature. van Loenen, E. J.; Frenken, J. W. M.; van der Veen, J. F. // Applied Physics Letters;1984, Vol. 45 Issue 1, p41 

    Ultrathin films (0-20 Ã…) of Ni have been deposited on atomically clean Si(111) surfaces at room temperature. The composition and morphology of the films have been determined, employing the high depth resolution obtainable in medium energy ion scattering. Disordered Ni2Si islands are formed,...

  • Ti silicide formation on thin-film silicon on insulator. Lin, Chenglu; Zhou, Wei; Zou, Shichang; Hemment, P. L. F. // Applied Physics Letters;5/14/1990, Vol. 56 Issue 20, p2004 

    In this letter the formation of Ti silicide on thin-film silicon on insulator has been investigated. The experimental results indicated that uniform TiSi2 layers with a low sheet resistance of 4.0–4.5 Ω/[Laplacian_variant] can be formed on thin-film silicon on insulator with a high...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics