Selective area oxidation of silicon with a scanning force microscope

Day, H.C.; Allee, D.R.
May 1993
Applied Physics Letters;5/24/1993, Vol. 62 Issue 21, p2691
Academic Journal
Demonstrates the selective area oxidation of silicon with scanning force microscope (SFM). Use of electric field to induce selective area oxidation; Use of SFM to expose polymethylmethacrylate; Revelation of silicon characteristic trenches atomic force microscopy imaging.


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