TITLE

Selective area oxidation of silicon with a scanning force microscope

AUTHOR(S)
Day, H.C.; Allee, D.R.
PUB. DATE
May 1993
SOURCE
Applied Physics Letters;5/24/1993, Vol. 62 Issue 21, p2691
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Demonstrates the selective area oxidation of silicon with scanning force microscope (SFM). Use of electric field to induce selective area oxidation; Use of SFM to expose polymethylmethacrylate; Revelation of silicon characteristic trenches atomic force microscopy imaging.
ACCESSION #
4375187

 

Related Articles

  • Two-dimensional junction identification in multicrystalline silicon solar cells by scanning Kelvin probe force microscopy. Jiang, C.-S.; Moutinho, H. R.; Reedy, R.; Al-Jassim, M. M.; Blosse, A. // Journal of Applied Physics;Nov2008, Vol. 104 Issue 10, p104501 

    We report on a two-dimensional investigation of the p-n junction in multicrystalline silicon solar cells using scanning Kelvin probe force microscopy (SKPFM). The junction location and depth were identified by SKPFM potential measurement and subsequent data analysis, where a procedure taking...

  • Enhanced sensitivity to force gradients by using higher flexural modes of the atomic force microscope cantilever. Hoummady, M.; Farnault, E. // Applied Physics A: Materials Science & Processing;1998, Vol. 66 Issue 7, pS361 

    Abstract. Higher flexural modes of a Si cantilever are used in order to increase the operating frequencies in non-contact mode scanning force microscopy. By recording frequency responses at different tip-sample distances and by using different flexural modes, long-range tip-sample interactions...

  • Quasi in situ scanning force microscope with an automatic operated reaction chamber. Hund, Markus; Olszowka, Violetta; Fischer, Franz; Krejtschi, Heinz // Review of Scientific Instruments;Nov2011, Vol. 82 Issue 11, p113709 

    We describe the design and performance of a quasi in situ scanning force microscope with an automatic operated reaction chamber. The design provides a repetitive hermetically sealed sample environment for successive processing. The reaction chamber is based on a combination of a flexure-guided...

  • Impact of elasticity on the piezoresponse of adjacent ferroelectric domains investigated by scanning force microscopy. Jungk, Tobias; Hoffmann, Ákos; Soergel, Elisabeth // Journal of Applied Physics;Oct2007, Vol. 102 Issue 8, p084102 

    As a consequence of elasticity, mechanical deformations of crystals occur on a length scale comparable to their thickness. This is exemplified by applying a homogeneous electric field to a multidomain ferroelectric crystal: As one domain is expanding, the adjacent ones are contracting, leading...

  • Surface structure of hydrated amorphous silicon oxide at 3 Angstrom resolution by scanning force.... Tillmann, Ralf W.; Radmacher, Manfred // Applied Physics Letters;6/22/1992, Vol. 60 Issue 25, p3111 

    Examines the topology of a hydrated amorphous silicon oxide surface with a scanning force microscope. Independence of the measured surface reliefs from the local tip shape; Indication of the occurrence of surface rearrangement; Reason behind the decay of the surface relief; Features of the...

  • Diffraction-assisted micropatterning of silicon surfaces by ns-laser irradiation. Haro-Poniatowski, E.; Acosta-Zepeda, C.; Mecalco, G.; Hernndez-Pozos, J. L.; Batina, N.; Morales-Reyes, I.; Bonse, J. // Journal of Applied Physics;2014, Vol. 115 Issue 22, p224309-1 

    Single-pulse (532nm, 8 ns) micropatterning of silicon with nanometric surface modulation is demonstrated by irradiating through a diffracting pinhole. The irradiation results obtained at fluences above the melting threshold are characterized by scanning electron and scanning force microscopy and...

  • Dynamics of gold cluster systems. Berlinger, A. // Applied Physics A: Materials Science & Processing;1999, Vol. 68 Issue 4, p403 

    Abstract. The growth of gold clusters on the surface of 10-nm-thick gold films deposited on the isotropic native SiO[sub x] surface of Si(111) wafers was studied as a function of annealing time at relatively low annealing temperatures (50 and 100 Celsius) by application of scanning force...

  • Highly ordered self-organized dot patterns on Si surfaces by low-energy ion-beam erosion. Ziberi, B.; Frost, F.; Rauschenbach, B.; Höche, Th. // Applied Physics Letters;7/18/2005, Vol. 87 Issue 3, p033113 

    Scanning force microscopy (AFM) and high-resolution transmission electron microscopy (HRTEM) have been used to investigate the complex topography evolution of Si surfaces during low-energy ion beam erosion. Depending on ion-beam parameters, a variety of different topographies can develop on the...

  • Micromachined fabrication of Si cantilevers with Schottky diodes integrated in the tip. Leinhos, T.; Stopka, M.; Oesterschulze, E. // Applied Physics A: Materials Science & Processing;1998, Vol. 66 Issue 7, pS65 

    Abstract. Modern applications of scanning probe microscopy (SPM) frequently demand the simultaneous measurement of surface topography and another physical quantity of interest. In this paper we present a scanning three microscopy (SFM) probe fabricated from Si with a Schottky diode integrated in...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics