Observation of staggered band lineup in In[sub 0.5]Ga[sub 0.5]P/Al[sub 0.43]Ga[sub 0.57]As

Jong Boong Lee; Kwan-Shik Kim; Byung-Doo Choe
May 1993
Applied Physics Letters;5/24/1993, Vol. 62 Issue 21, p2688
Academic Journal
Examines the conduction band discontinuity and interface charge density for In[sub 0.5]Ga[sub 0.5]P/Al[sub 0.43]Ga[sub 0.57]As heterostructure. Growth of heterostructures in gallium arsenide substrate; Fabrication of light-emitting devices with double heterostructures; Limitation of laser diodes to double heterostructure.


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