TITLE

Observation of staggered band lineup in In[sub 0.5]Ga[sub 0.5]P/Al[sub 0.43]Ga[sub 0.57]As

AUTHOR(S)
Jong Boong Lee; Kwan-Shik Kim; Byung-Doo Choe
PUB. DATE
May 1993
SOURCE
Applied Physics Letters;5/24/1993, Vol. 62 Issue 21, p2688
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the conduction band discontinuity and interface charge density for In[sub 0.5]Ga[sub 0.5]P/Al[sub 0.43]Ga[sub 0.57]As heterostructure. Growth of heterostructures in gallium arsenide substrate; Fabrication of light-emitting devices with double heterostructures; Limitation of laser diodes to double heterostructure.
ACCESSION #
4375186

 

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