In situ Cr gettering in polycrystalline silicon sheets obtained by edge-defined film-fed growth

Pivac, B.; Borghesi, A.; Sassella, A.; Kalejs, K.; Bathey, B.R.
May 1993
Applied Physics Letters;5/24/1993, Vol. 62 Issue 21, p2664
Academic Journal
Examines the gettering of chromium (Cr) during the growth of silicon sheets from Cr-doped melt upon exposure of the solid/liquid interface to carbon monoxide or dioxide gases. Occurrence of gettering at the crystal surface; Mechanism of carbon participation in forming gettering sites; Affinity of Cr for carbide formation.


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