Removal of GaAs surface contaminants using H[sub 2] electron cyclotron resonance plasma

Hong, M.; Freund, R.S.; Choquette, K.D.; Luftman, H.S.; Mannaerts, J.P.; Wetzel, R.C.
May 1993
Applied Physics Letters;5/24/1993, Vol. 62 Issue 21, p2658
Academic Journal
Examines the removal of surface contaminants from gallium arsenide (GaAs) substrates. Utilization of electron cyclotron resonance hydrogen plasma to remove native oxides; Chemical etching of GaAs to reduce carbon and silicon residues; Importance of contamination-free GaAs surface for optoelectronic applications.


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