TITLE

Removal of GaAs surface contaminants using H[sub 2] electron cyclotron resonance plasma

AUTHOR(S)
Hong, M.; Freund, R.S.; Choquette, K.D.; Luftman, H.S.; Mannaerts, J.P.; Wetzel, R.C.
PUB. DATE
May 1993
SOURCE
Applied Physics Letters;5/24/1993, Vol. 62 Issue 21, p2658
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the removal of surface contaminants from gallium arsenide (GaAs) substrates. Utilization of electron cyclotron resonance hydrogen plasma to remove native oxides; Chemical etching of GaAs to reduce carbon and silicon residues; Importance of contamination-free GaAs surface for optoelectronic applications.
ACCESSION #
4375176

 

Related Articles

  • Electronic properties of GaAs surfaces etched in an electron cyclotron resonance source and chemically passivated using P[sub 2]S[sub 5]. Glembocki, O. J.; Tuchman, J. A.; Dagata, J. A.; Ko, K. K.; Pang, S. W.; Stutz, C. E. // Applied Physics Letters;7/6/1998, Vol. 73 Issue 1 

    Photoreflectance has been used to study the electronic properties of (100) GaAs surfaces exposed to a Cl[sub 2]/Ar plasma generated by an electron cyclotron resonance source and subsequently passivated by P[sub 2]S[sub 5]. The plasma etch shifts the Fermi level of p-GaAs from near the valence...

  • Electrical properties of GaAs selectively grown by electron cyclotron resonance plasma-excited... Yamamoto, Norio; Kondo, Naoto; Nanishi, Yasushi // Applied Physics Letters;2/11/1991, Vol. 58 Issue 6, p604 

    Focuses on the electrical properties of gallium arsenide layers selectively grown by electron cyclotron resonance plasma-excited molecular beam epitaxy. Results on silicon doping into the selectively grown layer and on the electrical properties at the interface between the substrate and grown...

  • GaAs-oxide removal using an electron cyclotron resonance hydrogen plasma. Lu, Z.; Schmidt, M.T.; Chen, D.; Osgood Jr., R.M.; Holber, W.M.; Podlesnik, D.V.; Forster, J. // Applied Physics Letters;3/18/1991, Vol. 58 Issue 11, p1143 

    Investigates the surface chemistry of gallium arsenide (GaAs)-oxide removal with an electron cyclotron resonance (ECR) hydrogen plasma with x-ray photoelectron spectroscopy. Efficient removal of As oxide at room temperature, with removal of Ga oxide expedited by heating; Band bending changes...

  • Ultralow damage depth by electron cyclotron resonance plasma etching of GaAs/InGaAs quantum wells. Bickl, T.; Jacobs, B.; Straka, J.; Forchel, A. // Applied Physics Letters;3/8/1993, Vol. 62 Issue 10, p1137 

    Examines the ultralow damage depth of gallium arsenide/indium gallium arsenide quantum wells in an electron cyclotron resonance reactor. Use of photoluminescence measurements in determining etch process effects; Impact of lower pressure on electron gas temperature; Influence of ion bombardment...

  • A study of metal/GaAs interface modification by hydrogen plasma. Wang, Y. G.; Ashok, S. // Journal of Applied Physics;3/1/1994, Vol. 75 Issue 5, p2447 

    Studies the modification of metal/gallium arsenide (GaAs) interfaces by atomic hydrogen using radio frequency plasma in a reactive ion etching system as well as hydrogen generated in an electron cyclotron resonance (ECR) system. GaAs wafers used in the study; Electrical behavior of p-GaAs...

  • Effects of electron cyclotron resonance etching on the ambient (100) GaAs surface. Glembocki, O.J.; Tuchman, J.A. // Applied Physics Letters;5/29/1995, Vol. 66 Issue 22, p3054 

    Evaluates the use of photoreflectance and Auger electron spectroscopies in characterizing etch damage in gallium arsenide (GaAs) etched with an electron cyclotron resonance source. Information on the Fermi-level pinning position at the GaAs/oxide interface; Identification of the chemical...

  • A simple kinetic model for the optimization of electron cyclotron resonance/reactive ion beam.... Sugiyama, Masakazu; Yamaizumi, Takayuki // Applied Physics Letters;8/14/1995, Vol. 67 Issue 7, p897 

    Determines the optimum performance for the electron cyclotron resonance/reactive ion beam etching reactor for GaAs. Significance of examining the effect of chloride flow rate on chlorine concentration to the experiment; Level of peak intensity observed in the reactor not containing GaAs...

  • Dynamics of GaAs surfaces exposed to argon and hydrogen electron-cyclotron-resonance plasmas observed by real-time optical reflection spectroscopy. Weegels, L. M.; Saitoh, T.; Kanbe, H. // Journal of Applied Physics;6/1/1995, Vol. 77 Issue 11, p5987 

    Presents information on a study which analyzed the dynamics of the interaction of electron-cyclotron-resonance (ECR) plasmas with the surface of gallium arsenide substrates by real-time optical reflection spectroscopy. Description of the experimental apparatus and procedures; Findings of...

  • Low-temperature GaAs epitaxial growth using electron-cyclotron resonance/metalorganic-molecular-beam epitaxy. Tanaka, Yoshimitsu; Kunitsugu, Yasuhiro; Suemune, Ikuo; Honda, Yoshiaki; Kan, Yasuo; Yamanishi, Masamichi // Journal of Applied Physics;9/1/1988, Vol. 64 Issue 5, p2778 

    Develops a low-temperature gallium arsenide growth method called electron-cyclotron resonance (ECR) molecular-beam epitaxy. Advantage of the method; Significance of low-temperature epitaxial growth of compound semiconductor films; Growth condition of gallium arsenide epitaxy by ECR-metalorganic...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics