TITLE

Photoluminescence of AlAs/GaAs superlattice quantum wells

AUTHOR(S)
Shih, Y.C. Albert; Streetman, B.G.
PUB. DATE
May 1993
SOURCE
Applied Physics Letters;5/24/1993, Vol. 62 Issue 21, p2655
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the photoluminescence of aluminum arsenide (AlAs)/gallium arsenide (GaAs) superlattice quantum wells (SLQW). Placement of SL between aluminum gallium arsenide confining layers; Synthesis of AlAs and GaAs layer thicknesses in SL; Evidence of type-II band alignment in SLQW with thin GaAs layers.
ACCESSION #
4375175

 

Related Articles

  • Structure variation of the index of refraction of GaAs-AlAs superlattices and multiple quantum wells. Kahen, K. B.; Leburton, J. P. // Applied Physics Letters;9/1/1985, Vol. 47 Issue 5, p508 

    We present for the first time a detailed calculation of the index of refraction of various GaAs-AlAs superlattices. The calculation is performed by using a hybrid approach which combines the k·p method with the pseudopotential technique. Appropriate quantization conditions account for the...

  • Optical properties of quantum wells with ultrathin-layer superlattice barriers. Ishibashi, A.; Mori, Y.; Nakamura, F.; Watanabe, N. // Journal of Applied Physics;4/1/1986, Vol. 59 Issue 7, p2503 

    Presents a study which fabricated single quantum wells of gallium arsenide with barriers of (aluminum arsenide)[sub 2](gallium arsenide)[sub 2] ultrathin-layer superlattices. Measurement of photoluminescence; Experiments and results; Discussion.

  • Observation of bistability in GaAs/AlAs superlattices. Yaohui Zhang; Klann, Robert // Applied Physics Letters;5/26/1997, Vol. 70 Issue 21, p2825 

    Examines the observation of current bistability in gallium arsenide/aluminum arsenide semiconductor superlattices. Dominance of sequential resonant tunneling between quantum wells in the transport; Correlation of bistability with Hopf bifurcation; Role of space charge layer changes in...

  • Optical properties of GaAs/GaP strained-layer superlattices. Recio, M.; Armelles, G.; Meléndez, J.; Briones, F. // Journal of Applied Physics;2/15/1990, Vol. 67 Issue 4, p2044 

    Investigates optical properties of strained-layer superlattices. Reasons for interests in semiconductor heterostructures made of lattice-mismatched materials; Details on the experiment; Calculation of the optical properties of structures consisting of two superlattices confining gallium...

  • Thin quantum-well superlattices of GaAs and (GaAs)1-x (ZnSe)x with ZnSe: Possibility of band gaps in the blue-green. Shen, Jun; Dow, John D.; Ren, Shang Yuan // Journal of Applied Physics;4/15/1990, Vol. 67 Issue 8, p3761 

    Presents a theoretical prediction stating that thin quantum-well superlattices or spike superlattices of gallium arsenide in zinc selenide will produce band gaps in the yellow-green, and that (gallium arsenide)[sub1-x](zinc selenide)[subx] will lead to green and blue gaps. Sample preparation;...

  • Interfacial-band discontinuities for strained layers of InxGa1-xAs grown on (100) GaAs. Marie, X.; Barrau, J.; Brousseau, B.; Amand, Th.; Brousseau, M.; Rao, E. V. K.; Alexandre, F. // Journal of Applied Physics;1/15/1991, Vol. 69 Issue 2, p812 

    Studies excitonic transitions in pseudomorphic single quantum wells of In[subx]Ga[sub1-x]As grown on a gallium arsenide substrate. Reason for the interest in strained-layer superlattices and quantun wells; Photocurrent spectra of the samples; Approximations made in the calculation of the...

  • Picosecond optical nonlinearities in a strained InAs/GaAs hetero n-i-p-i structure. McCallum, D. S.; Huang, X. R.; Dawson, Martin D.; Boggess, Thomas F.; Smirl, Arthur L.; Hasenberg, T. C.; Kost, Alan // Journal of Applied Physics;1/15/1992, Vol. 71 Issue 2, p929 

    Studies the nonlinear optical properties of indium arsenide and gallium arsenide hetero n-i-p-i structure containing strained superlattice quantum wells in the intrinsic regions using picosecond pump and probe pulse of the same photon energy. Investigation of optical nonlinearities associated...

  • Free carrier absorption in semiconducting quantum wells for confined LO phonon scattering. Bhat, J. S.; Kubakaddi, S. S.; Mulimani, B. G. // Journal of Applied Physics;11/15/1992, Vol. 72 Issue 10, p4966 

    Deals with a study which examined free carrier absorption in semiconducting quantum wells for confined phonon scattering. Information on electron-polar optical phonon scattering in gallium arsenide/gallium aluminum arsenide quantum wells and superlattices; Methodology of the study; Results and...

  • Selective Stark-ladder transitions in an asymmetric double-well GaAs/AlAs superlattice. Fujiwara, Kenzo; Hinooda, Shin-ichi; Kawashima, Kenji // Applied Physics Letters;7/7/1997, Vol. 71 Issue 1, p113 

    Examines the optical transitions in a biperiodic gallium arsenide/aluminum arsenide superlattice with asymmetric double quantum wells. Presence of Stark-ladder transitions in the superlattice; Explanation for the ladder transition selectivity; Calculation of the stark ladder wave function using...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics