Activation energy for the C49-to-C54 phase transition of polycrystalline TiSi[sub 2] films with

Matsubara, Y.; Horiuchi, T.; Okumura, K.
May 1993
Applied Physics Letters;5/24/1993, Vol. 62 Issue 21, p2634
Academic Journal
Investigates the C-49-to-C54 phase transition in TiSi[sub 2] thin films. Dependence of the films on arsenic (As) concentration; Use of refractory metal silicides to reduce circuit parasitic resistances; Increase in energy barrier with the phase transition temperature; Role of the grain boundary precipitates in the phase transition pinning.


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