TITLE

Effects of heat treatment on sharp-line photoluminescence of GaAs grown by low-temperature

AUTHOR(S)
Yu, P.W.; Talwar, Devki N.; Stutz, C.E.
PUB. DATE
May 1993
SOURCE
Applied Physics Letters;5/24/1993, Vol. 62 Issue 21, p2608
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the effect of annealing on the photoluminescence spectra of gallium arsenide (GaAs) crystals grown by molecular beam epitaxy. Use of synchronous detection with a lock-in amplifier; Incorporation of lattice phonons to calculate Green's function; Generation of the conditions for the occurrence of impurity modes.
ACCESSION #
4375159

 

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