Effects of heat treatment on sharp-line photoluminescence of GaAs grown by low-temperature

Yu, P.W.; Talwar, Devki N.; Stutz, C.E.
May 1993
Applied Physics Letters;5/24/1993, Vol. 62 Issue 21, p2608
Academic Journal
Examines the effect of annealing on the photoluminescence spectra of gallium arsenide (GaAs) crystals grown by molecular beam epitaxy. Use of synchronous detection with a lock-in amplifier; Incorporation of lattice phonons to calculate Green's function; Generation of the conditions for the occurrence of impurity modes.


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