Extremely high quantum efficiency (86%) operation of AlGaInP visible laser diode with lateral

Kidoguchi, Isao; Kamiyama, Satoshi; Mannoh, Masaya; Ban, Yuzaburoh
May 1993
Applied Physics Letters;5/24/1993, Vol. 62 Issue 21, p2602
Academic Journal
Examines the aluminum gallium indium phosphide (AlGaInP) visible laser diode with waveguide structure. Stability of laser transverse-mode oscillation; Effect of propagation loss on laser diode; Fabrication of lasers by AlGaInP quaternary alloy.


Related Articles

  • High-power 630-640 nm GaInP/GaAlInP laser diodes. Ou, S.S.; Yang, J.J. // Applied Physics Letters;8/24/1992, Vol. 61 Issue 8, p892 

    Demonstrates high-power gallium indium phosphide/gallium aluminum indium phosphide visible laser diodes operating at 630-640 nanometer. Determination of threshold current densities; Effect of coating the rear facets; Observation of unusual differential quantum efficiency versus cavity length...

  • Low-loss hydrogenated buried waveguide coupler integrated with a four-wavelength distributive.... Allovon, M.; Talneau, A. // Applied Physics Letters;9/29/1997, Vol. 71 Issue 13, p1750 

    Describes a method of realizing low-loss buried waveguide integrated sources with four-wavelength distributive Bragg reflector laser array on indium phosphide. Development of wavelength division multiplexed networks; Observation of multiwavelength sources emitting in the spectral window of...

  • Azimuthally polarized cathodoluminescence from InP nanowires. Brenny, B. J. M.; van Dam, D.; Osorio, C. I.; Gómez Rivas, J.; Polman, A. // Applied Physics Letters;11/16/2015, Vol. 107 Issue 20, p201110-1 

    We determine the angle and polarization dependent emission from 1.75 mm and 2.50 mm long InP nanowires by using cathodoluminescence polarimetry. We excite the vertical wires using a 5 keV electron beam, and find that the 880 nm bandgap emission shows azimuthally polarized rings, with the number...

  • Measurement of the gain saturation spectrum in InGaAsP diode lasers. Frankenberger, Rudolf; Schimpe, Robert // Applied Physics Letters;12/10/1990, Vol. 57 Issue 24, p2520 

    The origin of nonlinear gain suppression in InGaAsP lasers is analyzed by experiments sensitive to small gain changes. The spectral distribution of gain change is determined by measuring the intensity modulation spectra of current modulated Fabry–Perot lasers with nearly single...

  • The effect of molecular-beam-epitaxial growth conditions on the electrical characteristics of In0.52Al0.48As/In0.53Ga0.47As resonant tunneling diodes. Oh, J. E.; Mehdi, I.; Pamulapati, J.; Bhattacharya, P. K.; Haddad, G. I. // Journal of Applied Physics;1/15/1989, Vol. 65 Issue 2, p842 

    Presents a study which investigated the dependence of the performance characteristics of In[sub0.52]Al[sub0.48]As/In[sub0.53]Ga[sub0.47]As resonant tunneling diodes upon molecular-beam-epitaxial growth parameters. Parameters that affect the negative differential resistance characteristics;...

  • Self-trapping of two-dimensional optical beams and light-induced waveguiding in photorefractive.... Chauvet, M.; Hawkins, S.A. // Applied Physics Letters;5/12/1997, Vol. 70 Issue 19, p2499 

    Investigates the self-trapping of two-dimensional optical beams and light-induced waveguiding in photorefractive indium phosphide at telecommunication wavelengths. Efficiency of self-trapping; Creation of a photorefractive soliton; Relationship between the intensity dependent phenomenon and the...

  • Electric-field-induced absorption effect in LPE-grown InGaAsP/InP multi-quantum-well waveguides. Ishino, Masato; Matsui, Yasushi; Sasai, Yoichi; Ogura, Mototsugu // Journal of Applied Physics;9/15/1988, Vol. 64 Issue 6, p2868 

    Presents a study that investigated the characteristics of a multi-quantum-well strip-loaded waveguides in indium-gallium arsenide-phosphide/indium phosphide systems. Methodology; Effect of electric field-induced absorption on the waveguides; Determination of the propagation losses of the...

  • Improved characteristics of 660 nm AlGaInP red laser diodes by precise control of the V/III ratio in metal-organic vapor phase epitaxy. Ohgoh, Tsuyoshi; Mukai, Atsushi; Mukaiyama, Akihiro; Asano, Hideki; Hayakawa, Toshiro // Applied Physics Letters;10/30/2006, Vol. 89 Issue 18, p181117 

    The effects of the group V/III ratio during low-pressure metal-organic vapor phase epitaxy on laser performance have been investigated for GaInP/AlGaInP laser diodes. The quality of GaInP is found to be better at a V/III ratio much lower than an optimal V/III ratio for AlGaInP. GaInP/AlGaInP...

  • Apparatus for minority-carrier lifetime measurements on light-emitting devices. Kot, Miroslav // Review of Scientific Instruments;May93, Vol. 64 Issue 5, p1268 

    The experimental setup has been designed that allows measurements of the minority-carrier lifetime versus drive current in InGaAsP/InP LEDs. The small-signal technique has been used to obtain the lifetime data and a special averaging system has been built for measurements at very low injection...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics