Electrical transport in laser-crystallized polycrystalline silicon-germanium thin-films

Scheller, L.-P.; Weizman, M.; Nickel, N. H.; Yan, B.
August 2009
Applied Physics Letters;8/10/2009, Vol. 95 Issue 6, p062101
Academic Journal
We report on the electrical transport properties of intentionally undoped, laser-crystallized polycrystalline silicon-germanium thin-films. The electrical transport in this material strongly depends on the alloy composition and the crystallization procedure. At low temperatures the undoped germanium-rich samples show an unexpected high p-type conductivity with a weak temperature dependence. Posthydrogenation results in a pronounced decrease in the conductivity and a change in the dominating low temperature transport behavior. The results are discussed in terms of a grain-boundary dominated transport model.


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