Characterization of boron charge traps at the interface of Si/SiO2 using second harmonic generation

Park, H.; Qi, J.; Xu, Y.; Varga, K.; Weiss, S. M.; Rogers, B. R.; Lüpke, G.; Tolk, N.
August 2009
Applied Physics Letters;8/10/2009, Vol. 95 Issue 6, p062102
Academic Journal
We report results from optical second harmonic generation studies of boron charge traps near the interface of Si/SiO2. Our data suggest that a static electric field at the interface is formed during the oxide growth process due to the presence of negative boron ions (B-) in the silicon substrate and positive boron ions (B+) in the oxide. We demonstrated that the B+ state traps could be filled through the creation of neutral boron states created by internal photoelectron emission. By fitting our data, we found that the effective interface susceptibility |χ(2)| depends on doping concentration.


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