TITLE

Manipulation of the magnetic configuration of (Ga,Mn)As nanostructures

AUTHOR(S)
Haigh, J. A.; Wang, M.; Rushforth, A. W.; Ahmad, E.; Edmonds, K. W.; Campion, R. P.; Foxon, C. T.; Gallagher, B. L.
PUB. DATE
August 2009
SOURCE
Applied Physics Letters;8/10/2009, Vol. 95 Issue 6, p062502
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have studied the magnetic reversal of L-shaped nanostructures fabricated from (Ga,Mn)As. The strain relaxation due to the lithographic patterning results in each arm having a uniaxial magnetic anisotropy. Our analysis confirms that the magnetic reversal takes place via a combination of coherent rotation and domain wall propagation with the domain wall positioned at the corner of the device at intermediate stages of the magnetic hysteresis loops. The domain wall energy can be extracted from our analysis. Such devices have found implementation in studies of current induced domain wall motion and have the potential for application as nonvolatile memory elements.
ACCESSION #
43720456

 

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