External cavity quantum cascade laser tunable from 7.6 to 11.4 μm

Hugi, Andreas; Terazzi, Romain; Bonetti, Yargo; Wittmann, Andreas; Fischer, Milan; Beck, Mattias; Faist, Jérôme; Gini, Emilio
August 2009
Applied Physics Letters;8/10/2009, Vol. 95 Issue 6, p061103
Academic Journal
We present the development of a broad gain quantum cascade active region. By appropriate cascade design and using a symmetric active region arrangement, we engineer a flat gain and increase the total modal gain in the desired spectral range. Grating-coupled external cavity quantum cascade lasers using this symmetric active region are tunable from 7.6 to 11.4 μm with a peak optical output power of 1 W and an average output power of 15 mW at room-temperature. With a tuning of over 432 cm-1, this single source covers an emission range of over 39% around the center frequency.


Related Articles

  • Bound-to-bound midinfrared intersubband absorption in carbon-doped GaAs/AlGaAs quantum wells. Malis, Oana; Pfeiffer, Loren N.; West, Kenneth W.; Sergent, A. Michael; Gmachl, Claire // Applied Physics Letters;8/29/2005, Vol. 87 Issue 9, p091116 

    Bound-to-bound intersubband absorption in the valence band of modulation-doped GaAs quantum wells with digitally alloyed AlGaAs barriers was studied in the midinfrared wavelength range. A high-purity solid carbon source was used for the p-type doping. Strong narrow absorption peaks due to...

  • Gain-bandwidth trade-off in a transistor laser: quantum well dislocation effect. Taghavi, Iman; Kaatuzian, Hassan // Optical & Quantum Electronics;Apr2009, Vol. 41 Issue 6, p481 

    The Authors report an analytical model to investigate optoelectronic characteristics reliance of a Transistor Laser on Quantum Well Location. Using simulated base recombination lifetime, optical frequency response for different quantum-well locations extracted. Slipping the well towards the...

  • Collector current map of gain and stimulated recombination on the base quantum well transitions of a transistor laser. Chan, R.; Feng, M.; Holonyak Jr., N.; James, A.; Walter, G. // Applied Physics Letters;4/3/2006, Vol. 88 Issue 14, p143508 

    Data are presented showing significant structure in the collector I-V characteristics of a transistor laser, a decrease (“compression”) in the common-emitter gain (β≡ΔIC/ΔIB), that can be mapped in some detail and related to quantum well (QW) carrier recombination....

  • Band Alignment and Carrier Recombination in GaAsSb/GaAs Quantum Wells. Hild, K.; Sweeney, S. J.; Jin, S. R.; Healy, S. B.; O'Reilly, E. P.; Johnson, S. R.; Wang, J.-B.; Zhang, Y.-H. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p1431 

    Using a combination of experimental and theoretical techniques, we investigated the band alignment and the carrier recombination processes occurring in GaAsSb/GaAs structures. We find that for Sb fractions ∼30%, the band alignment is slightly type II. From studies on lasers based upon this...

  • Enhanced side-mode suppression in chaotic stadium microcavity lasers. Mestanza, S. N. M.; Von Zuben, A. A.; Frateschi, N. C. // Journal of Applied Physics;Mar2009, Vol. 105 Issue 6, p063101 

    We report an enhanced side-mode suppression in Bunimovich stadium lasers with strained InGaAs/InGaP quantum well (QW) active regions. This is realized with spatially selective carrier injection along a particular periodic orbit of the stadium. The selectivity is achieved using He+3 ion...

  • Quantum dot emission from site-controlled InGaN/GaN micropyramid arrays. Edwards, P. R.; Martin, R. W.; Watson, I. M.; Liu, C.; Taylor, R. A.; Rice, J. H.; Na, J. H.; Robinson, J. W.; Smith, J. D. // Applied Physics Letters;11/8/2004, Vol. 85 Issue 19, p4281 

    InxGa1-xN quantum dots have been fabricated by the selective growth of GaN micropyramid arrays topped with InGaN/GaN quantum wells. The spatially, spectrally, and time-resolved emission properties of these structures were measured using cathodoluminescence hyperspectral imaging and...

  • Nanoanalytical quantification of the nitrogen content in Ga(NAs)/GaAs by using transmission electron microscopy in combination with refined structure factor calculation. Volz, K.; Rubel, O.; Torunski, T.; Baranovskii, S. D.; Stolz, W. // Applied Physics Letters;2/20/2006, Vol. 88 Issue 8, p081910 

    We have studied systematically the nitrogen content in Ga(NAs)/GaAs quantum wells by (002) dark-field transmission electron microscopy (TEM). The nitrogen contents derived from this analysis, when assuming that all the atoms occupy their unperturbed positions in a virtual crystal, deviate...

  • Two-wavelength absorption modulation spectroscopy of bandtail absorption in GaAs quantum wells. Von Lehmen, A.; Zucker, J. E.; Heritage, J. P.; Chemla, D. S.; Gossard, A. C. // Applied Physics Letters;5/26/1986, Vol. 48 Issue 21, p1479 

    We have discovered that below-band-gap photoexcitation produces large bleaching of the exciton absorption in GaAs quantum well heterostructures. We have used this effect to perform the first investigation of room-temperature bandtail absorption in these structures. We find that the...

  • Modulation of a quantum well potential by a quantum-dot array. Tsatsul�nikov, A. F.; Egorov, A. Yu.; Zhukov, A. E.; Kovsh, A. R.; Ustinov,, V. M.; Ledentsov, N. N.; Maksimov, M. V.; Sakharov, A. V.; Suvorova, A. A.; Kop�ev, P. S.; Alferov, Zh. I.; Bimberg, D. // Semiconductors;Jan1997, Vol. 31 Issue 1, p88 

    The possibility of locally varying the potential energy of the electrons and holes localized in a quantum well by a quantum-dot array deposited in the immediate vicinity of the quantum well is demonstrated. These changes in the potential energy are induced when a strain arises in the quantum-dot...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics