TITLE

Substrate Fermi level effects in photocatalysis on oxides: Properties of ultrathin TiO2/Si films

AUTHOR(S)
Kazazis, D.; Guha, S.; Bojarczuk, N. A.; Zaslavsky, A.; Kim, H.-C.
PUB. DATE
August 2009
SOURCE
Applied Physics Letters;8/10/2009, Vol. 95 Issue 6, p064103
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Photocatalysis has widespread applications from solar cells to photolithography. We studied the photocatalytic properties of TiO2 films of thicknesses down to 2 nm, grown on n-type and p-type silicon wafers, using the oxidation of isopropanol as a model system. Direct in vacuo mass spectrometry measurements were performed under irradiation above the TiO2 bandgap. We present a model consistent with our experimental results, which indicate that only near-surface electron-hole pair generation is relevant and that the reaction rate can be controlled by varying the substrate Fermi level in going from n-type to p-type silicon, by approximately a factor of 2.
ACCESSION #
43720432

 

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