Observation of electron tunneling induced photon emission in gallium (Ga) doped (1%) zinc oxide (ZnO) sample using scanning tunneling microscopy

Dey, Shirshendu; Shinde, S. D.; Adhi, K. P.; Dharmadhikari, C. V.
August 2009
Applied Physics Letters;8/10/2009, Vol. 95 Issue 6, p063503
Academic Journal
Electron tunneling induced photon emission in gallium doped (1%) zinc oxide was detected by scanning tunneling microscope in ambient condition. Simultaneously acquired topography and photon maps reveal interesting correlation. Photon maps depict few intense emission spots. Existence of a threshold tunneling current (6 nA) and applied bias (1.8 V), for detectable photon emission was observed. Further analysis of the results suggests Fowler-type photon emission which is ascribed to radiative electron-hole recombination. Localized photon emission spectroscopy exhibits prominent peaks at hν=2.96, 3.43, and 3.80 eV, which match well with the results obtained from photoluminescence studies.


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