TITLE

Defect reduction in epitaxial GaSb grown on nanopatterned GaAs substrates using full wafer block copolymer lithography

AUTHOR(S)
Jha, Smita; Liu, C.-C.; Kuan, T. S.; Babcock, S. E.; Nealey, P. F.; Park, J. H.; Mawst, L. J.; Kuech, T. F.
PUB. DATE
August 2009
SOURCE
Applied Physics Letters;8/10/2009, Vol. 95 Issue 6, p062104
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Defect reduction in the large lattice mismatched system of GaSb on GaAs, ∼7%, was accomplished using full wafer block copolymer (BCP) lithography. A self-assembled BCP mask layer was used to generate a hexagonal pattern of ∼20 nm holes on ∼40 nm centers in a 20 nm SiO2 layer. GaSb growth initially takes place selectively within these holes leading to a dense array of small, strain-relaxed epitaxial GaSb islands. The GaSb grown on the patterned SiO2 layer exhibits a reduction in the x-ray linewidth attributed to a decrease in the threading dislocation density when compared to blanket pseudomorphic film growth.
ACCESSION #
43720428

 

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