Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile

Hongping Zhao; Guangyu Liu; Xiao-Hang Li; Huang, G. S.; Poplawsky, Jonathan D.; Penn, S. Tafon; Dierolf, Volkmar; Tansu, Nelson
August 2009
Applied Physics Letters;8/10/2009, Vol. 95 Issue 6, p061104
Academic Journal
Three-layer staggered InGaN quantum wells (QWs) light-emitting diodes (LEDs) emitting at 520–525 nm were grown by metal-organic chemical vapor deposition by employing graded growth-temperature profile. The use of staggered InGaN QW, with improved electron-hole wave functions overlap design, leads to an enhancement of its radiative recombination rate. Both cathodoluminescence and electroluminescence measurements of three-layer staggered InGaN QW LED exhibited enhancements by 1.8–2.8 and 2.0–3.5 times, respectively, over those of conventional InGaN QW LED.


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