TITLE

Investigation of the source-side injection characteristic of a dopant-segregated Schottky barrier metal-oxide-semiconductor field-effect-transistor

AUTHOR(S)
Sungho Kim; Sung-Jin Choi; Moongyu Jang; Yang-Kyu Choi
PUB. DATE
August 2009
SOURCE
Applied Physics Letters;8/10/2009, Vol. 95 Issue 6, p063508
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A unique characteristic of hot electron injection from the source side in a dopant-segregated Schottky barrier (DSSB) metal-oxide-semiconductor field-effect-transistor is investigated. A hot electron injection triggered by the sharp energy band bending near the source-side Schottky barrier is verified by the charge pumping method with numerical device simulations. With the aid of the charge pumping method, the lateral distribution of interface traps generated by injected hot electrons is analyzed. The results provide a guideline for the optimization of programming and erase operations in DSSB devices.
ACCESSION #
43720416

 

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