Controllable resistance switching behavior of NiO/SiO2 double layers for nonvolatile memory applications

Ji-Hyuk Choi; Sachindra Nath Das; Jae-Min Myoung
August 2009
Applied Physics Letters;8/10/2009, Vol. 95 Issue 6, p062105
Academic Journal
Resistive switching characteristics of the double layer (NiO/SiO2) were studied for possible nonvolatile memory applications. The effect of SiO2 thickness variation in the memory device was investigated. A repeatable resistance switching behavior was observed with on/off ratio 105. The operation voltage of the device depended on the thickness of SiO2 layer and it increases with increasing SiO2 thickness. High-resolution transmission electron microscopy analyses revealed that the formation/rapture of Ni filament like percolation path inside SiO2 layer is responsible for the current transport mechanism.


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